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Industry Buzz

INDUSTRY BUZZ

  • October 27, 2014 - Peregrine Semi's new RF-SOI based UltraCMOS® PE42722 high-linearity RF switch allows customer premises equipment (CPE) vendors to future proof their devices to meet the strict linearity requirements of the DOCSIS 3.1 Cable Industry Standard (Courtesy: Peregrine Semi) - Peregrine Semi senior marketing manager Kinana Hussain says the company's new RF-SOI PE42722 switch “...is a game... Read more »
  • October 27, 2014 - In a piece entitled Time To Look At SOI Again (you can read it here), SemiconductorEngineering Executive Editor Mark Lapedus charts the industry's accelerating interest in SOI, including FD-SOI and FinFETs on SOI. - He notes that FD-SOI is now planned for four generations: 28nm, 20nm, 14nm and 10nm. The offering has expanded beyond ST to Samsung and GF. He quotes GF's Mike Mendicino as... Read more »
  • October 17, 2014 - In a blog entitled “FD-SOI Will Be Mainstream” (8 October 2014 – read it here), ElectronicsWeekly'sDavid Manners reports that the CEO of Synapse Design predicts FD-SOI will be a mainstream technology. - Synapse has been working in FD-SOI since 2011, has already taped out three designs and has more in the pipeline, the CEO told Manners. He sees a lot of activity coming from Japan... Read more »
  • October 17, 2014 - (Courtesy: Sony and Soitec) - SOI wafer leader Soitec was awarded the Best Partnership Award by Sony Semiconductor. Soitec earned the recognition for outstanding support that has contributed to Sony’s success in the RF semiconductor market. - Soitec’s high-resistivity silicon-on-insulator (HR-SOI) wafers have long been a favorite of RF designers for 2G and 3G switches. But the... Read more »
  • September 26, 2014 - All the presentations made at the SOI Consortium's Shanghai workshops on RF-SOI and FD-SOI are now being posted. - The RF-SOI posting includes presentations from IBS, ST, UCL, Skyworks, Shanghai Technology Institute, IBM, SMIC, Soitec and GlobalFoundries – click here for those. - The FD-SOI postings include presentations from IBS, ST, Synopsys, Verisilicon, Wave Semi, IBM and... Read more »
  • September 26, 2014 - STMicroelectronics has chosen WaveIntegrityTM from CWS for rapid and practical analysis of noise issues in complex FD-SOI SOCs (press release here). - “ST needed a fast, practical method to ensure our IP would not be susceptible to noise issues, when implemented in complex, multi-million gate SoCs. We have also found we can optimize the power-supply requirements to IP in the knowledge... Read more »
  • September 17, 2014 - Revelations by semiwiki’s Eric Esteve that TSMC has filed a significant FD-SOI patent has generated a rush of speculation in the press and online forums. In his piece When TSMC advocates FD-SOI…, Esteve noted that TSMC's patent for “Planar compatible FDSOI Design Architecture” (granted 14 May 2013) heralded the advantages as follows: “Devices formed on SOI substrates offer... Read more »
  • September 17, 2014 - RF-SOI Pioneer Peregrine has announced new switches for wireless infrastructure and carrier-grade WiFi. The UltraCMOS® PE42442 and PE42452 high-isolation, multi-throw switches address emerging requirements in wireless infrastructure equipment (read press release here). The UltraCMOS® PE42424 RF Switch enables 802.11ac Wi-Fi access points to deliver faster data rates in high-density,... Read more »
  • September 11, 2014 - In his recent piece, A couple of misconceptions about FD-SOI (3 September 2014), semiwiki blogger and IP expert Eric Esteve corrects some assertions surfacing about FD-SOI. He reminds designers that to really benefit from FD-SOI, you want to leverage body-biasing. He explains how ST has automated the IP conversion process so it takes about half the time you’d normally expect. He also... Read more »
  • September 11, 2014 - A thoroughly engaging and amusing LinkedIn Pulse piece by Bruce Kleinman comes down firmly on the side of 28nm FD-SOI. Entitled 28nm: Home Improvements (posted 13 August 2014), it’s subtitled, “Welcome to 28nm! Make yourself comfortable, we’re going to be here for awhile.” He says (among lots of other things, including astute observations about 3D), “…in my book 28nm FD-SOI... Read more »
  • September 1, 2014 - An excellent article in SST details Leti's monolithic 3D (M3D) technology, as presented at the SemiconWest 2014 Leti Day (read the full article here). Written by Brian Cronquest, MonolithIC 3D's VP Technology & IP, the piece covers a presentation given by Olivier Faynot, Leti’s Device Department Director, about “monolithic 3D technology as the 'solution for scaling'.”... Read more »
  • September 1, 2014 - Murata and Peregrine Semiconductor have entered into a definitive agreement under which Murata will acquire all outstanding shares of Peregrine not owned by Murata (read full press release here). Peregrine will become a wholly owned subsidiary of Murata and continue with its current business model of solving the world’s toughest RF challenges. Peregrine supplies many wireless markets,... Read more »
  • August 21, 2014 - imec's 28Gb/s silicon photonics platform for optical interconnects and other optical applications will be included in an upcoming multiproject wafer run, reports R. Colin Johnson in EETimes (read the article here). These runs, which are on SOI wafers, are a joint effort by ePIXfab (founded by imec and Leti), Europractice IC and MOSIS. They provide a cost-effective vehicle for fabless... Read more »
  • August 21, 2014 - Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “... results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate process.” The project is under the... Read more »
  • August 8, 2014 - In RF-SOI news, Peregrine and RFMD announced that they have settled all outstanding claims between the companies (read press release here). The two companies have entered into patent cross licenses and have agreed to dismiss all related litigation. - “We are pleased that we have reached agreement with RF Micro Devices and resolved all of our outstanding litigation under terms that... Read more »

Latest posts
IP for FD-SOI: Examples from ST Thumbnail

IP for FD-SOI: Examples from ST

Posted by on February 14, 2014
In Design & Manufacturing, Editor's Blog
Tagged with , , , , , , , , , , ,

Interested in energy-efficient SOCs? At the IP-SOC Conference last fall, STMicroelectronics’ Giorgio Cesana presented examples of the technological competitiveness of FD-SOI IP for memories, cores, ultra-low voltage and analog. Here’s a brief recap. The complete presentation, entitled “FD-SOI Technology for Energy-Efficient SoCs: IP Development Examples” is available on the Design & Reuse website (click here […]

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FD-SOI Opportunities in China Thumbnail

FD-SOI Opportunities in China

Posted by on February 5, 2014
In Design & Manufacturing, News & Viewpoints, Professor's Perspective
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Authors: Zhongli Liu, Kai Zhao, Jiajun Luo, Fang Yu, Tianchun Ye (IMECAS) The Chinese IC industry is facing a real opportunity, and Chinese IC developers are looking for points of entry to best leverage this important moment. The CTO of a large Chinese IC supplier is looking for system solutions for their SOC chips, in […]

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A New Open Foundry Source for FD-SOI? Soon, Says ST. Watch This Space. Thumbnail

A New Open Foundry Source for FD-SOI? Soon, Says ST. Watch This Space.

Posted by on January 31, 2014
In Editor's Blog, News & Viewpoints
Tagged with , , , , , , , , , , , , ,

STMicroelectronics will soon be announcing a “major foundry player” that will be both a dual FD-SOI manufacturing source for ST, plus an open source for the industry.  This important piece of news came out of the company’s Q4 and FY13 presentation in Paris on January 28th. While ST signed a licensing agreement with GlobalFoundries a […]

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Interview: Leti CEO Laurent Malier on FD-SOI and more Thumbnail

Interview: Leti CEO Laurent Malier on FD-SOI and more

Posted on January 23, 2014
In News & Viewpoints, SOI In Action
Tagged with , , , , , , , , , , , , , , , , ,

CEA-Leti is one of the world’s most important research institutes for micro- and nano-electronics. Key enabler to the greater SOI-based community, they’re the quiet mega-partner behind everything from Soitec’s Smart CutTM technology for SOI wafer manufacturing to the design and chip manufacturing technology in today’s FD-SOI revolution. Leti’s work always reaches far into our industry’s […]

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SOI: Looking Back Over a Year of Moving Forward (Part 2, RF-SOI & SOI-FinFETs) Thumbnail

SOI: Looking Back Over a Year of Moving Forward (Part 2, RF-SOI & SOI-FinFETs)

Posted by on January 17, 2014
In Editor's Blog, News & Viewpoints
Tagged with , , , , , , , , , , , , , , , , , ,

As we noted in the previous post (click here if you missed it), 2014 should be a terrific year for the greater SOI community. But before we look forward (which we’ll do in an upcoming post), let’s continue considering where we’ve been and some of the highlights of the last year.  In fact, there was […]

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