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Industry Buzz

INDUSTRY BUZZ

  • September 15, 2016 - With back bias,12nm FD-SOI beats 10nm FinFET on performance. This excellent news comes in by way of Peter Clarke of EETimes Europe (read the whole article here). Rutger Wijburg, GM of GloFo’s Dresden fab told him, "If you look at performance with back-bias 22FDX is the same or better than 16/14nm FinFET process. With 12FDX with back bias you get better than 10nm FinFET... Read more »
  • August 15, 2016 - Samsung is adding two embedded NVM (non-volatile memory) options to its 28nm FD-SOI line-up, Kelvin Low told EETimes' Peter Clark in a recent interview (read the whole piece here). - Low, who heads up marketing and bizdev for Samsung Foundry, indicated the following roll-out for 28nm FD-SOI: - eFlash – risk production by the end of 2017; volume in 2018 - eMRAM (SST-MRAM) – risk... Read more »
  • May 31, 2016 - FD-SOI is the default choice for digital in ST's automotive and discrete group (ADG), Marco Monti, EVP of the business unit told EETimes' Peter Clarke in a recent article (read it here). The next generation of ST's most advanced microcontrollers (currently on 40nm bulk) will be on 28nm FD-SOI, he said. Monti also gave examples of other FD-SOI automotive chips ST is doing for partners,... Read more »
  • May 27, 2016 - “We intend to focus all new engagements in design using 28nm FD-SOI,” Samsung Semi’s Kelvin Low told SemiEngineering’s Mark Lapedus in a recent article (read it here). - Low, who’s senior directory of the company’s foundry marketing says they’ll of course continue to support existing 28nm bulk customers, “But we think FD-SOI has enough benefits to attract new customers... Read more »
  • May 11, 2016 - FD-SOI will be featured in the upcoming Symposia on VLSI Technology & Circuits (Honolulu, Hawaii from June 13-17, 2016 – click here for more info). The theme of the conference is “Inflections for a Smart Society,” and luminaries from throughout the SOI ecosystem will be featured in presentations, short courses and panel discussions. - A short course entitle “Circuit Design... Read more »
  • April 29, 2016 - From RF-SOI pioneer Peregrine Semi comes a steady stream of new chips and design wins. - News include: - Two UltraCMOS® MPAC–Doherty products—the PE46130 and PE46140 (press release here). These monolithic phase and amplitude controllers (MPAC) join the PE46120 in offering maximum phase-tuning flexibility for Doherty power amplifier (PA) optimization. Designed for the LTE and LTE-A... Read more »
  • April 25, 2016 - Registration is open for GlobalFoundries' technical webinar, “How to Implement an ARM Cortex-A17 Processor in 22FDX 22nm FD-SOI Technology” (click here to go to the registration page). The webinar will cover the optimal steps to successfully implement ARM® Cortex®-A Series* processors using 22FDXTM 22nm FD-SOI technology. - GF Design Enablement Fellow Dr. Joerg Winkler will... Read more »
  • April 7, 2016 - GlobalFoundries recently announced availability of a new set of RF-SOI PDKs for the company's 7SW SOI technology. GF, which has now delivered more than 20 billion RF-SOI chips for the world’s smartphones, tablets and more, notes that its 7SW SOI technology is optimized for multi-band RF switching in next-generation smartphones. It is also poised to drive innovation in IoT... Read more »
  • April 5, 2016 - Three of the world's More-than-Moore and SOI technology development powerhouses have signed a comprehensive agreement for ongoing collaboration and cooperation in developing new technologies for the emerging IoT market. SITRI of Shanghai, and CEA-Leti and Minatec of Grenoble will work together to accelerate the adoption of their latest technologies and create a global innovation... Read more »
  • March 31, 2016 - Coupling Wave Solutions (CWS) has a new productivity tool called SiPEX, which enables RF-SOI designers to increase the number of design iterations—including Spice simulation—up to 10 times in the same time frame. - “With SiPEX, RF switch designers will be able to make their design changes in less than 15 minutes and obtain a few decibels (dB) of variation over silicon measurements... Read more »
  • March 23, 2016 - Don't forget to get your paper submitted to the top conference with a major focus on the SOI ecosystem: the IEEE S3S (SOI/3D/SubVt). The Call For Papers (CFP) deadline is April 15, 2016. As we noted for you in ASN back in December, the theme of the conference, which will take place October 10th – 13th in San Francisco, is “Energy Efficient Technology for the Internet of Things”. -... Read more »
  • March 18, 2016 - EDI CON China 2016, taking place April 19-21 in Beijing at the China National Convention Center (CNCC) will feature a keynote talk by GlobalFoundries' Peter Rabbeni, Sr. Director, RF BU Business Development & Product Marketing. The talk, entitled, "RF SOI: Revolutionizing Radio Design Today and Driving Innovation for Tomorrow",will kick off the newly added RF-SOI Technology Track.... Read more »
  • February 12, 2016 - Peregrine Semiconductor’s new 75-ohm glitch-less RF digital step attenuator, the UltraCMOS® PE4314, is ideal for wired broadband applications. - RF-SOI pioneer Peregrine Semiconductor has announced theUltraCMOS® PE4314, a 75-ohm glitch-less RF digital step attenuator (DSA). This new DSA extends Peregrine’s existing glitch-less DSA portfolio to 75 ohms. The PE4314 is ideal for... Read more »
  • February 8, 2016 - Professor Jean-Pierre Raskin (right) receiving the Blondel Medal for his industry-changing work on RF-SOI. Jury president Professor Pere Rocal I Cabarrocas (left) of the Ecole Polytechnique - Université Paris-Saclay presented the prize. - RF-SOI substrate guru Jean-Pierre Raskin, whose team at UCL* has driven the technology behind the most advanced wafer substrates for RF applications,... Read more »
  • February 3, 2016 - Design & Reuse, in partnership with GlobalFoundries, ST, Soitec and Leti, is sponsoring a series of FD-SOI IP Workshops around the globe. (Click here for more information.) These working days aim at sharing information about IP that’s currently available or is being designed for FD-SOI technology. - The first conference will take place during DATE in Dresden on 14 March 2016.... Read more »

Latest posts
RF-SOI – Foundries Weigh In On New 300mm Wafers for 4G/LTE-A, 5G and IoT. Plus a Look at the Innovation Pipeline – Part 2 of 2 Thumbnail

RF-SOI – Foundries Weigh In On New 300mm Wafers for 4G/LTE-A, 5G and IoT. Plus a Look at the Innovation Pipeline – Part 2 of 2

Posted by on March 23, 2016
In Design & Manufacturing, Editor's Blog
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As you may have read in the first part of this series, Soitec (the industry’s leading supplier of SOI wafers) says its 200mm RF-SOI wafers have been used to produce over 20 billion chips, and the company is now in high-volume manufacturing of a 300mm version of its wildly successful RFeSI line (see press release […]

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Now also on 300mm wafers and headed for 5G and IoT, RF-SOI’s going strong and stronger (>20 billion chips to date) – Part 1 of 2 Thumbnail

Now also on 300mm wafers and headed for 5G and IoT, RF-SOI’s going strong and stronger (>20 billion chips to date) – Part 1 of 2

Posted by on March 18, 2016
In Design & Manufacturing, Editor's Blog
Tagged with , , , , , , , , , , , , ,

Soitec, the industry’s leading supplier of SOI wafers recently announced it’s in high-volume manufacturing of a 300mm version of its wildly successful RFeSI line (see press release here). What’s it all about? FEMs. RF front-end module – aka FEM – chips handle the back-and-forth of signals between the transceiver and the antenna. FEMs built on […]

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What’s Behind the Power Savings in sureCore’s FD-SOI SRAM IP? Thumbnail

What’s Behind the Power Savings in sureCore’s FD-SOI SRAM IP?

Posted by on February 12, 2016
In Design & Manufacturing
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By Duncan Bremner, CTO SureCore Limited Editor’s note: sureCore just announced availability of its 28nm FD-SOI memory compiler (press release here), which supports the company’s low-power, Single and Dual Port SRAM IP. Here, the company’s CTO explains why this IP is getting such impressive results. ~ ~ ~ Recently, sureCore announced results from a 28nm FD-SOI test chip that […]

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GlobalFoundries and Synopsys Streamline the Move to 22nm FD-SOI Thumbnail

GlobalFoundries and Synopsys Streamline the Move to 22nm FD-SOI

Posted by and on February 9, 2016
In Design & Manufacturing
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By: Tamer Ragheb, Digital Design Methodology Technical Manager at GlobalFoundries and Josefina Hobbs, Senior Manager of Strategic Alliances, Synopsys It’s clear that getting an optimal balance of power and performance at the right cost is foremost in the minds of designers today. Designers who want either high performance or ultra low-power, or ideally both, have a […]

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Great FD-SOI start for 2016: Samsung, GF, Renesas, NXP/Freescale, ST, Soitec Thumbnail

Great FD-SOI start for 2016: Samsung, GF, Renesas, NXP/Freescale, ST, Soitec

Posted by on February 3, 2016
In Design & Manufacturing, Editor's Blog
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Just a month into 2016 and we already have a raft of FD-SOI news from Samsung, GlobalFoundries, NXP/Freescale, Renesas and more. And of course RF-SOI continues ever stronger. Here’s a quick update of what we’ve been seeing, starting with news from the recent SOI Consortium forum in Tokyo. Many of the presentations are now available on […]

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