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Industry Buzz

INDUSTRY BUZZ

  • July 18, 2014 - Soitec estimates that it has shipped enough of its eSI wafers to fabricate more than 1.4 billion RF front-end semiconductor devices. (Read the press release here.) The proprietary Enhanced Signal Integrity™ (eSI) substrates are now the substrate of choice for manufacturing cost-effective and high-performance radio-frequency (RF) devices providing a power boost for 4G /LTE... Read more »
  • July 15, 2014 - ST has posted a series of helpful website page for those new to FD-SOI – click here to see it. It starts with the basics, moves onto a discussion of how FD-SOI continues Moore's Law, and finishes with info on power efficiency, memories, analog and high-speed... Read more »
  • July 15, 2014 - An excellent article highlighting Leti's work on monolithic 3D was recently published in the IEEE's Spectrum magazine – click here to read it. In the article, Maud Vinet, manager of advanced CMOS at Leti says they've worked closely with ST to ensure manufacturability. “There is no major roadblock to the transfer of this technology to foundries,” she says in the article. “I feel... Read more »
  • June 17, 2014 - Specialty foundry TowerJazz announced the availability of an enhanced RF-SOI CMOS process design kit (PDK) for its 0.18µm process technology (see press release here). The kit was developed for use with Agilent Technologies’ Advanced Design System (ADS) software and targets a wide range of analog markets including front-end modules for mobile phones, tablets and WiFi... Read more »
  • June 17, 2014 - A ppt presentation by STMicroelectronics entitled Features and Benefits of 14nm UTBB* FD-SOI Technology is now posted on WeSRCH (click here to view it). It is fairly technical, covering process boosters, modules and innovations, mask sequences, performance and... Read more »
  • June 17, 2014 - IBM Foundry Solutions announced a new SOI-based technology for RF called 7SW SOI. The company says it is designed for 30 percent better performance than its predecessor, 7RF SOI, with which IBM shipped over seven billion chips in the last three years. The new mobile phone chip technology can help device manufacturers provide consumers with extremely fast downloads, higher quality... Read more »
  • June 8, 2014 - (Courtesy: SiTime) - SiTime, which leverages SOI for high-performance MEMS timing solutions, has introduced what it says is the smallest, lowest power 32 kHz TCXO (temperature compensated oscillator – read the press release here). With its tiny footprint and ultra-low power consumption, the SiT1552 MEMS TCXO enables a paradigm shift in the size and battery life of wearable electronics... Read more »
  • June 8, 2014 - Soitec, the world leader in SOI wafer manufacturing, has hired a former Intel exec, Thom Degnan, to take on the job of VP of the company's sales and bizdev for the Electronics Division in North America (read press release here). Soitec says that this strategic hiring supports the Electronics Division’s focus on mobile markets with FD-SOI wafers for digital electronics and RF-SOI... Read more »
  • May 28, 2014 - In an EETimes blog, Handel Jones of IBS says that the Samsung-ST FD-SOI announcement represents a major opportunity. (Read full blog here.) “Samsung Electronics has a major opportunity with its large wafer capacity to support low-leakage products with its 28 nm FD-SOI process,” he wrote. “Cadence Design Systems, Synopsys, and Mentor Graphics are all supporting the FD-SOI... Read more »
  • May 28, 2014 - Peregrine Semi has shipped the first RF switches built on the company’s SOI-based UltraCMOS 10 technology platform. With partner GlobalFoundries, Peregrine also announces the completion of product and process qualification for the advanced RF-SOI technology (see press release here). The 130 nm technology combines the performance of UltraCMOS technology with the economies of SOI, and... Read more »
  • May 28, 2014 - Soitec and Simgui (Shanghai, China) are partnering on SOI wafer production for RF and power applications. The newly signed deal (read press release here) includes a licensing and technology transfer agreement. Simgui will establish a high-volume SOI manufacturing line using Soitec’s proprietary Smart Cut™ technology to directly supply the Chinese market. In addition, Simgui will... Read more »
  • May 19, 2014 - Within 24 hours of the news that Samsung was the new foundry for ST’s 28nm FD-SOI, the news made headlines across all the major tech pubs and social media forums. EETimes, Electronics Weekly, ZDNet and more are all resolutely enthusiastic about the deal. SemiWiki founder Dan Nenni said it was “…one of the biggest stories we will cover this month, if not this year, absolutely.”... Read more »
  • May 19, 2014 - The FD-SOI announcement by Samsung and ST represents a tipping point for FD-SOI deployment and for Soitec’s electronics business in the next decade (see Soitec press release here), says the company whose substrate technology makes it all possible. Soitec is the world leader in SOI wafer manufacturing. This announcement validates Soitec’s early strategic technology choice to develop... Read more »
  • May 19, 2014 - Cadence has announcedthe immediate availability of two intellectual property (IP) solutions for third-party designs on the 28nm FD-SOI process node that is accessible via the recently announced agreement between STMicroelectronics and Samsung Electronics. (See Cadence press release here.) On this new process node, the Cadence® Denali™ DDR4 IP supports up to 2667Mbps performance,... Read more »
  • May 7, 2014 - A Soitec white paper entitled Innovative RF-SOI Wafers for Wireless Applications is now available on the weSRCH website (see paper here). The paper explains the value of using RF-SOI substrates, and what the latest generation of Soitec’s WaveSOI™ and eSI™ wafers brings to RF IC performance. It also explains how these substrates simplify the IC manufacturing process in order to... Read more »

Latest posts
Body Biasing in FD-SOI: A Designer’s Nightmare or a Longtime Friend? Thumbnail

Body Biasing in FD-SOI: A Designer’s Nightmare or a Longtime Friend?

Posted by on April 30, 2014
In Design & Manufacturing, News & Viewpoints
Tagged with , , , , , , , , , , , , , , , , , ,

By Ali Khakifirooz (Spansion) One of the unique features of the FD-SOI technology is the ability of using a wide range of body bias to modulate the transistor VT. Unlike bulk planar technology, where the maximum body bias is limited by p-n junction leakage and potential latch-up, in FD-SOI technology the full range of forward […]

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Interview: Peregrine’s new Marketing VP on Global 1®, RF-SOI drivers, UltraCMOS 10 Thumbnail

Interview: Peregrine’s new Marketing VP on Global 1®, RF-SOI drivers, UltraCMOS 10

Posted on April 25, 2014
In Design & Manufacturing, End-User Apps
Tagged with , , , , , , , , , , , , ,

Interview with : Duncan Pilgrim, VP of marketing ASN had a chance to catch up with Duncan Pilgrim, Peregrine Semi’s new VP of Marketing. Here he shares insights into the company’s new reconfigurable RF front end. Duncan Pilgrim is the VP of marketing at Peregrine Semiconductor. A 17-year semiconductor industry veteran, he previously served as VP […]

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Going Up! Monolithic 3D as an Alternative to CMOS Scaling Thumbnail

Going Up! Monolithic 3D as an Alternative to CMOS Scaling

Posted by , and on April 9, 2014
In Design & Manufacturing, R&D/Labnews
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By Jean-Eric Michallet, Hughes Metras and Perrine Batude (CEA-Leti)  The miniaturization of the MOSFET transistor has been the main booster for the semiconductor industry’s rapid growth in the last four decades. Following “Moore’s Law”, this scaling race has enabled performance increases in integrated circuits at a continuous cost reduction: today’s $200 mobile phone has as […]

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FD-SOI: Back to Basics for Best Cost, Energy Efficiency and Performance Thumbnail

FD-SOI: Back to Basics for Best Cost, Energy Efficiency and Performance

Posted by and on March 26, 2014
In Design & Manufacturing, News & Viewpoints
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By Bich-Yen Nguyen and Christophe Maleville (Soitec) We are in the era of mobile computing with smart handheld devices and remote data storage “in the cloud,” with devices that are almost always on and driven by needs of high data transmission rate, instant access/connection and long battery life.  With all the ambitious requirements for better […]

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Why Migration to FD-SOI is a Better Approach Than Bulk CMOS and FinFETs at 20nm and 14/16nm for Price-Sensitive Markets Thumbnail

Why Migration to FD-SOI is a Better Approach Than Bulk CMOS and FinFETs at 20nm and 14/16nm for Price-Sensitive Markets

Posted by on March 19, 2014
In Design & Manufacturing, News & Viewpoints
Tagged with , , , , , , , , , , ,

By Handel Jones IBS has recently issued a new white paper entitled Why Migration to 20nm Bulk CMOS and 16/14nm FinFETs Is Not the Best Approach for the Semiconductor Industry.  The focus of the analysis is on technology options that can be used to give lower cost per gate and lower cost per transistor within […]

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