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Industry Buzz

INDUSTRY BUZZ

  • March 3, 2015 - Freescale is designing its next generation microprocessor, the iMX7, on 28nm FD-SOI, EETimes has just revealed. This was in an article by Chief International Correspondent Junko Yoshida entitled Freescale, Cisco, Ciena Give Nod to FD-SOI (read it here). Freescale microcontroller SVP & GM Geoff Lees told EETimes the chip’s designed for “'secure' IoT applications, including... Read more »
  • March 3, 2015 - NXP recently expanded its GreenChip line of SOI-based power supply controller ICs with the new TEA1832TS (click here for more product info). Here at ASN, we first covered this line back in 2011 (see that Buzz here), and NXP’s been adding to it ever since. - Smart, green power supplies are one of the most important ways that designers reduce the power consumption of modern electronics.... Read more »
  • February 23, 2015 - SureCore's ultra-low power SRAM technology on 28nm FD-SOI saves 70% in read/write power and reduces leakage by 30% compared to 40nm bulk implementations, writes SemiconductorEngineering Editor-In-Chief Ed Sperling (read the article here). Hitting the sweet spot for mobile, IoT and wearables, SureCore recently raised $1.6 million in... Read more »
  • February 23, 2015 - SiTime's SOI-MEMS solution is a key part of a new realtime health and fitness tracking solution from MegaChips called “frizz”. MegaChips has announced a partnership with Bosch Sensortec to provide a complete reference design for use of frizz in smartphones, wearables and other personal devices allowing consumers to monitor their activities in real time (read the press release here).... Read more »
  • February 17, 2015 - A recent post by Eric Esteve on SemiWiki, entitled Sony Endorses FD-SOI to Attack Wearable & IoT (click here to read it) delves into some of the technical and design details of Sony's Tokyo presentation on a 1mW 28nm FD-SOI GPS. (The full presentation is available here. Or click here to read the ASN overview of all the Tokyo presentations.) For the design community, IP expert Esteve... Read more »
  • February 17, 2015 - ARM is working on FD-SOI libraries, and the ecosystem is now there, says David Manners of Electronics Weekly. In two separate pieces, he cited conversations with ARM EVP Pete Hutton. In Microcontrollers Become Major at ARM (click here to read it), Hutton confirmed both the FD-SOI libraries and customers. In Cinderella (click here to read it), Manners looked at all the FD-SOI pieces –... Read more »
  • February 9, 2015 - SemiWiki blogger Paul McLellan has posted another excellent FD-SOI piece, this time covering Samsung's presentation at the recent FD-SOI/RF-SOI Workshop in Tokyo (click here to read it). Within 24 hours of posting, it had already been shared over 60 times on LinkedIn. As always, McLellan puts the presentation in perspective for the design community, calling out key... Read more »
  • February 9, 2015 - (Courtesy: ST, designreuse) - A video made during ST's FD-SOI presentation at IP-SoC 2014 has now been posted by designreuse on YouTube (you can see it here). Over 40 minutes long, it details the European THINGS2DO project, which includes almost 50 partners working on the FD-SOI ecosystem. (This follows onto the PLACES2BE project, which is finishing up this year.) It underscores the... Read more »
  • February 8, 2015 - In a SemiEngineering piece entitled FD-SOI meets the IoT, Executive Editor Ann Steffora Mutschler talked to a couple of design houses working on FD-SOI IoT projects. Synapse Design has taped out multiple chips, and has more projects underway, they told her, with reports of impressive power savings. In close collaboration with a foundry, OpenSilicon is working on an FD-SOI test chip that... Read more »
  • February 8, 2015 - (Courtesy: Peregrine Semiconductor) - Peregrine Semiconductor has unveiled the UltraCMOS® PE42524, the industry's first RF-SOI switch to operate up to 40 GHz (click here for product details, and here for the press release). This switch significantly extends Peregrine's high-frequency portfolio into frequencies previously dominated by gallium arsenide (GaAs) technology. “Our UltraCMOS... Read more »
  • February 2, 2015 - A new EETimes article entitled Sony Joins FD-SOI Club by Chief International Correspondent Junko Yoshida has created a tremendous buzz (click here to read it). The piece covers Sony's presentation at the latest RF/FD-SOI workshop in Tokyo (many of the presentation are now posted here). Sony described their design experience with porting a GPS chip to 28nm FD-SOI, which resulted in a... Read more »
  • February 2, 2015 - A 22nm SOI chip is at the heart of IBM’s new z13 mainframe, one of the most sophisticated computer systems ever built. (Augusto Menezes/Feature Photo Service for IBM) - The recently announced IBM z13, which is billed as the world’s fastest microprocessor, is built on SOI (of course!) (read the press release here). - At the heart of the latest in the IBM z-series of mainframes, the... Read more »
  • January 22, 2015 - Leti's M3D technology is now called "CoolCube". (Courtesy: Leti, IEDM 2014) - Leti’s monolithic 3D technology, which has now been dubbed “CoolCube”, was featured in a recent EETimes piece. Entitled True 3D monolithic integration eliminates TSV dependence (click here to read it), the article covers a Leti paper presented during a 3D-VLSI workshop preceding IEDM’14. Leti’s... Read more »
  • January 22, 2015 - Paul Boudre has been named CEO of Soitec. - Paul Boudre has been named CEO of SOI wafer leader, Soitec (see financial press release here). The company also announced its plans to re-focus on its core electronics business unit. - Q3 sales were 48 million euros, up 45% over last year. The sale of 200mm wafers (which are used in chips for RF-SOI and smartpower) were almost doubled from... Read more »
  • January 12, 2015 - A new interactive WebEx webinar on FD-SOI design sponsored by CMC Microsystems has been posted. Entitled Design and Characterization of Circuits and Devices in the ST 28nm Fully-Depleted Silicon-On-Insulator (FD SOI) (click hereto view it), it features two presentations by University of Toronto professors based on their recent experiences with circuit design in the ST’s 28nm FDSOI... Read more »

Latest posts
LTE-A/5G: Bring it on.  Next-gen Soitec eSI90 wafers predict & improve RF performance. Thumbnail

LTE-A/5G: Bring it on. Next-gen Soitec eSI90 wafers predict & improve RF performance.

Posted by on February 2, 2015
In Design & Manufacturing, Editor's Blog
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The folks at SOI wafer maker Soitec have announced an amazing update to their RF wafer line-up, with what they’re calling their eSI90 substrate (read the press release here). As you might expect, it improves on their terrifically successful line of substrates for the RF chips in smartphones and other mobile devices. And now with […]

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2015 – Turning the Tables for FD-SOI, RF-SOI and More Thumbnail

2015 – Turning the Tables for FD-SOI, RF-SOI and More

Posted by on January 22, 2015
In Editor's Blog
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If current momentum is any indication, 2015 will be the year the tables turn in favor of FD-SOI designs (with a big shout-out to IoT).  The RF-SOI juggernaut will continue cutting an enormous swath through the mobile market.   Attention to the exciting possibilities of monolithic 3D (M3D) technology (like Leti’s “CoolCube”) will continue to grow, […]

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SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage) Thumbnail

SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage)

Posted by on January 12, 2015
In Conferences, Paperlinks, R&D/Labnews
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Important SOI-based developments in MEMS, NEMS (like MEMS but N for nano), sensors and energy harvesting shared the spotlight with advanced CMOS and future devices at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 3, we’ll […]

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SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage) Thumbnail

SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage)

Posted by on January 9, 2015
In Conferences, Paperlinks, R&D/Labnews
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Beyond FD-SOI and FinFETs, important SOI-based developments in advanced device architectures including nanowires (NW), gate all around (GAA) and other FET structures shared the spotlight at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 2 of […]

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10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage) Thumbnail

10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage)

Posted by on December 31, 2014
In Conferences, Paperlinks, R&D/Labnews
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FD-SOI at 10nm (and other nodes) as well as SOI FinFETs shared the spotlight at IEDM 2014 (15-17 December in San Francisco), the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. There were about 40 SOI-based papers presented at IEDM. Here in Part 1 of ASN’s IEDM coverage, we […]

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