Industry Buzz


  • October 6, 2015 - Slide from Freescales presentation at the 2015 Shanghai FD-SOI Forum. (Courtesy: Freescale) - 28nm FD-SOI is on the Freescale roadmap for two key platforms in the company's flagship i.MX line of embedded application processors: - the i.MX 8 series for advanced graphics and performance, which is based on the ARM v8-A, - and the i.MX 7 power efficiency series, which is based on the ARM... Read more »
  • October 6, 2015 - Using SiTimes' SOI-MEMS based oscillator can extend battery life by a full day in some apps, Piyush Sevalia, Executive Vice President, Marketing for SiTime explained in a recent Planet Analog piece (read the whole thing here). - The traditional timing device is a quartz (passive crystal) resonator, which doesn't draw any power itself. But it doesn't save any either. As Piyush describes:... Read more »
  • October 2, 2015 - In what may be a first for the MEMS industry, CEA-Leti has manufactured micro-accelerometers on 300mm wafers, a development that could lead to significantly lower MEMS manufacturing costs. And yes, those 300mm wafers are SOI wafers. These are “thick” SOI wafers, with an insulating BOx (buried oxide) layer of 2µm, and top silicon of 220nm. - The most advanced of Leti'splatforms is... Read more »
  • October 2, 2015 - A very successful two-day forum on FD-SOI and RF-SOI in Shanghai (September 2015) featured presentations from CEOs, CTOs and VPs at GF, ST, Leti, ARM, Verisilicon, Synapse Design, SITRI, Skyworks, Freescale, TowerJazz, Soitec, Qorvo and many more. Most of the presentations are now available on the SOI Consortium Website, and the rest are expected shortly, so keep checking back. - To... Read more »
  • September 24, 2015 - In an EETimes interview, GlobalFoundries CEO Sanjay Jha said RF-SOI and FD-SOI were “...the right technologies at the right time,” (read the full piece here). He offered the new iPhone 6s as a proofpoint for the value of RF-SOI. For the company's 22nm FD-SOI, he said production tape-out will be “ the second half of 2016”. He sees big opps for FD-SOI with the fabless... Read more »
  • September 24, 2015 - Soitec, the world's SOI wafer leader, announced that the Board of Directors has named André-Jacques Auberton-Hervé as Chairman Emeritus (he founded Soitec together with Jean-Michel Lamure in 1992). - CEO Paul Boudre has been appointed Chairman of Soitec’s Board of Directors. - (Read the press release... Read more »
  • September 10, 2015 - FD-SOI champion STMicroelectronics has unveiled the company's first System-on-Chip (SoC) products on FD-SOI. Two multi-core ARM SoC offerings – both for set-top boxes – have been announced. ST credits the 28nm FD-SOI silicon technology with providing highly-efficient RF and analog integration as well as outstanding power efficiency so that set-top box makers can now design very... Read more »
  • September 10, 2015 - Global specialty foundry TowerJazz and TowerJazz Panasonic Semiconductor Co. (TPSCo), the leading analog foundry in Japan, have announced breakthrough RF-SOI technology for next-generation 4G LTE smartphones and IoT devices. Through a collaborative effort, TowerJazz and its majority owned subsidiary, TPSCo, have developed a new 300mm RF-SOI process that can reduce losses in an RF switch... Read more »
  • July 21, 2015 - In an interview with EETimes, GlobalFoundries CEO Sanjay Jha indicated that more than 50% of the Dresden fab output could be FD-SOI by 2018 (read it here). Jha also told EETimes that More-than-Moore technologies can be considered the mainstream. In the piece entitled, Can GloFo and Europe's chip firms unite? author Peter Clarke makes an excellent point that between the four European... Read more »
  • July 21, 2015 - An IBM paper on a 14nm SOI-FinFET SRAM functional down to 0.3V has garnered press attention. The paper, entitled 14nm FinFET Based Supply Voltage Boosting Techniques for Extreme Low Vmin Operation by R.V. Joshi et al, was presented during the Symposium on VLSI Circuits in Kyoto, Japan in June. According to the abstract, the authors presented a new, “... dynamic supply and interconnect... Read more »
  • July 14, 2015 - RF-SOI champion Peregrine Semiconductor has introduced the industry’s first 300mm RF-SOI technology. Dubbed UltraCMOS® 11, it is built on GlobalFoundries’ 130 nm 300mm RF technology platform (read full press release here). - The UltraCMOS 11 platform will be the foundation for Peregrine’s high volume mobile products and SOI products for other applications. It builds on the... Read more »
  • July 14, 2015 - SOI-wafer leader Soitec has appointed Grégoire Duban as Chief Financial Officer. This recruitment supports the ongoing strategic refocusing of the Group’s activities on its core electronics business, as Soitec announced on January 19 (read full press release here). Duban will report directly to Soitec CEO Paul Boudre. - “Grégoire Duban possesses over 18 years’ experience in... Read more »
  • July 6, 2015 - Qorvo recently announced that new high-performance SOI components are landing major wins at cellular base station manufacturers. (Read the press release here.) Ideal for broadband communications systems, the highly integrated components significantly reduce external components while lowering cost, power consumption, and weight in wireless infrastructure, test and measurement, and... Read more »
  • July 6, 2015 - Synopsys recently announce that its IC Compiler II place and route solution was used by STMicroelectronics to tape out a complex 28-nm-FD-SOI SoC. (Read the press release here.) Fast throughput and analysis delivered a 10X reduction in time-to-good-floorplan. A 5X faster implementation with 2X smaller memory footprint enabled breakthrough productivity while exceeding quality of results... Read more »
  • June 12, 2015 - SOI wafer leader Soitec and SITRI (aka Shanghai Industrial µTechnology Research Institute) have announced a collaboration agreement. (Read the press release here.) They say the strategic partnership will strengthen their leadership in high-growth wireless communications and the global market for RF apps, with a special emphasis on the fast-developing Chinese RF ecosystem. - They’ll... Read more »

Latest posts
It’s Samsung! Announcement with ST confirms new tier-1 foundry for faster, cooler, simpler 28nm FD-SOI Thumbnail

It’s Samsung! Announcement with ST confirms new tier-1 foundry for faster, cooler, simpler 28nm FD-SOI

Posted by on May 14, 2014
In Design & Manufacturing, Editor's Blog, News & Viewpoints
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Great news: Samsung and STMicroelectronics have revealed that Samsung is the new 28nm FD-SOI foundry (see the press release here.) Specifically, the two companies announced, “…a comprehensive agreement on 28nm Fully Depleted Silicon-on-Insulator (FD-SOI) technology for multi-source manufacturing collaboration.” The agreement covers ST’s 28nm FD-SOI design platform: the design enablement ecosystem and the process technology. […]

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A New Top-Tier FD-SOI Foundry – But Which One?

Posted by on May 7, 2014
In Editor's Blog, News & Viewpoints
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By Adele Hars, ASN Editor-in-Chief Speculation is mounting following ST’s April 28th announcement that they’d signed on a new first-tier foundry for 28nm FD-SOI manufacturing.  As of this posting, they haven’t yet said which one it is. The social media-sphere is abuzz about the mystery foundry – with posters in LinkedIn groups, Twitter, SemiWiki and […]

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Body Biasing in FD-SOI: A Designer’s Nightmare or a Longtime Friend? Thumbnail

Body Biasing in FD-SOI: A Designer’s Nightmare or a Longtime Friend?

Posted by on April 30, 2014
In Design & Manufacturing, News & Viewpoints
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By Ali Khakifirooz (Spansion) One of the unique features of the FD-SOI technology is the ability of using a wide range of body bias to modulate the transistor VT. Unlike bulk planar technology, where the maximum body bias is limited by p-n junction leakage and potential latch-up, in FD-SOI technology the full range of forward […]

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Interview: Peregrine’s new Marketing VP on Global 1®, RF-SOI drivers, UltraCMOS 10 Thumbnail

Interview: Peregrine’s new Marketing VP on Global 1®, RF-SOI drivers, UltraCMOS 10

Posted on April 25, 2014
In Design & Manufacturing, End-User Apps
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Interview with : Duncan Pilgrim, VP of marketing ASN had a chance to catch up with Duncan Pilgrim, Peregrine Semi’s new VP of Marketing. Here he shares insights into the company’s new reconfigurable RF front end. Duncan Pilgrim is the VP of marketing at Peregrine Semiconductor. A 17-year semiconductor industry veteran, he previously served as VP […]

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Going Up! Monolithic 3D as an Alternative to CMOS Scaling Thumbnail

Going Up! Monolithic 3D as an Alternative to CMOS Scaling

Posted by , and on April 9, 2014
In Design & Manufacturing, R&D/Labnews
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By Jean-Eric Michallet, Hughes Metras and Perrine Batude (CEA-Leti)  The miniaturization of the MOSFET transistor has been the main booster for the semiconductor industry’s rapid growth in the last four decades. Following “Moore’s Law”, this scaling race has enabled performance increases in integrated circuits at a continuous cost reduction: today’s $200 mobile phone has as […]

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