Industry Buzz

Wondering what’s new, what’s hot and what’s next in the SOI and advanced substrate world?  Check
out our Industry Buzz – now featuring regular updates.


CEA-Leti announced that Leti-UTSOI2, the first complete compact model that enlarges the physically described bias range for designers, is available in all major SPICE simulators (press release here). Compact models of transistors and other elementary devices are used to predict the behavior of a design. As such, they are embedded in simulations like SPICE that designers run before actual manufacturing. ST and Leti researchers presented UTSOI2 at IEDM 13. The model is dedicated to Ultra-Thin Body and Box FD-SOI technology, and is able to describe accurately independent double gate operation for sub-20nm nodes. It meets standard Quality and Robustness tests for circuit design applications.

“Enlarging the back biasing range accessible to the design community is key to optimizing the trade-off between performance and power consumption for UTBB technology,” said Thierry Poiroux, research engineer at Leti and model co-developer. “This provides more opportunities to utilize FDSOI’s advantages for mobile devices and other applications that require efficient energy use.”

The model’s development was supported by STMicroelectronics and partly funded by the ENIAC JU Places2Be project.

Posted December 19, 2013   -   Share this Buzz

Advanced substrate leader Soitec and Intelligent Epitaxy Technology, Inc. (IntelliEPI, Taiwan) a leader in InP, GaAs, and GaSb epi wafers, have signed a collaborative agreement to better serve the GaAs market (press release here).

“We are delighted to announce the license of our technology leading to a second source for our products for our key GaAs customers ,” said Bernard Aspar, Senior Vice President and Soitec’s Communication & Power Business Unit General Manager.

“This collaborative agreement will reinforce our GaAs technology and product know-how while, at the same time, offering Soitec’s customers supply-chain security,” said Yung-Chung Kao, IntelliEPI President and CEO.

Gallium arsenide (GaAs), a III-V semiconductor, is used in the manufacture of devices such as microwave frequency ICs, monolithic microwave ICs, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including InGaAs and GaInNAs.

Posted December 16, 2013   -   Share this Buzz

EVG850LTlores

Equipment maker EVG announced that the Singapore-MIT Alliance for Research Technology (SMART) ordered an EVG®850LT fully automated production bonding system designed for SOI and direct wafer bonding using low-temp plasma activation processing (press release here). SMART researchers will use the system to support  advanced substrate development efforts.  According to Professor Eugene Fitzgerald from MIT’s Department of Materials Science and Engineering, SMART chose the EVG850LT for the center’s advanced R&D efforts due to the system’s high process flexibility and performance, EVG’s experience in low-temperature bonding, and expertise and support in process development.

Posted December 16, 2013   -   Share this Buzz

Concluding, “Faster, Simpler, Cooler,…and Cheaper: FD-SOI technology should get very good traction in the near future!”, semiwiki blogger Eric Esteve has kicked off a very lively conversation.  Within a few days of posting Faster, Cooler, Simpler, could FD-SOI be Cheaper too?, there were almost 20 comments, with lots of good supplemental information from well-informed participants. This must-read piece marks the latest in a series of high-profile semiwiki posts on FD-SOI.

Posted December 16, 2013   -   Share this Buzz

Two SOI pioneers have been elevated to the status of Fellow by the IEEE for their extraordinary accomplishents:

  • Jean-Pierre Raskin (Université catholique de Louvain (UCL), Louvain-la-Neuve, Belgium) – joined the “Class of 2014” for “contributions to the characterization of silicon-on-insulator RF MOSFETs and MEMS devices”.  Dr. Raskin received his PhD degree from UCL, where he is a professor and head of the Microwave Laboratory.
  • Carlos Mazure (Soitec, Bernin, France) – joined the “Class of 2013” for “leadership in the field of silicon on insulator and memory technologies”. Dr. Mazure is CTO of SOI wafer leader Soitec. He has filed more than 100 patents worldwide and is the author of 120 scientific papers. He holds two PhDs in physics, one from the University of Grenoble, France, and the other from the Technical University of Munich, Germany.
Posted December 5, 2013   -   Share this Buzz

Sand 9 has debuted the TM651, an SOI-based MEMS solution that it says achieves the stringent low-noise, high-stability and harsh environmental requirements for precision timing in communications infrastructure, industrial and military applications. It is the first product based on Sand 9’s patented Temperature Compensated MEMS Oscillator (TCMO™) platform.  Sand 9 is working closely with a number of leading analog semiconductor partners to provide reference designs for their synthesizer and timing products. Peter Real, vice president, High Speed Products and Technology, Analog Devices, commented: “As a leading supplier into communications infrastructure, industrial and military markets, Analog Devices is committed to exploring technologies that may improve the experience of our customers. Having initially invested in Sand 9 late last year, we are pleased to see them launch their first precision MEMS timing product.”

Posted December 5, 2013   -   Share this Buzz

Good news for the SOI ecosystem: SOI wafer suppliers Soitec and SunEdison (formerly MEMC) have ended their longstanding legal feud and entered into a patent cross-license agreement (press release here).  The agreement provides each company with access to the other’s patent portfolio for SOI technologies and ends all their outstanding legal disputes.

For Soitec, it represents a milestone for the SOI ecosystem, said Christophe Maleville, SVP of the company’s Digital Electronics Division.

For SunEdison, it adds to the company’s current SOI product capability, said Horacio Mendez, VP of the company’s Semiconductor Advanced Solutions division.

The agreement covers wafers for device architectures such as partially-depleted SOI (PD-SOI), fully-depleted SOI (FD-SOI) and radio-frequency SOI (RF-SOI) as well as advanced FinFETs.

The two companies have also agreed to grant each other the right to use their respective wholly-owned patents for research and development purposes. This applies to the development of products with advanced semiconductor materials beyond silicon that enable the fabrication of high-mobility channels for advanced generation digital applications.

Posted November 27, 2013   -   Share this Buzz

“At 14nm FD-SOI is much cheaper, 30-40% cheaper, than Intel’s technology,” Asen Asenov told David Manners in a recent Electronics Weekly post (see full post here).  Asenov is CEO and Founder of Gold Standard Simulations (GSS).  The subject of the post was how TSMC has turned to GSS for statistical analysis tools. Professor Asenov is a fan of ST’s FD-SOI, noted Manners. The main challenge is building the ecosystem, he concluded.

Posted November 27, 2013   -   Share this Buzz

D+R_ST_FDSOIslideDesign & Reuse has posted an excellent presentation by Giorgio Cesana of ST entitled FD-SOI Technology for Energy Efficient SoCs: IP Development Examples (click here). It explains why the technology is faster-cooler-simpler – and more cost effective.

After a quick tour of the tech basics, Cesana gets into cost/performance ratios, comparing the technology to bulk planar (28/20nm) and bulk FinFET (16/14nm).  He then gives examples of ARM core IP, and how FD-SOI is leveraged in ultra-low-voltage, analog and high-speed apps.

Posted November 18, 2013   -   Share this Buzz

“The performance and power results on ARM processors on 28 nm FD-SOI are outstanding,” writes Josh Walrath in PC Perspectives. In a piece looking at where graphics are headed, he goes on to say, “FD-SOI seems like it answers most of the issues that crop up with the 22/20 nm node. It does not require massive design rule changes, it can re-use a lot of bulk silicon manufacturing technology, and it runs perfectly fine with planar transistors at 22/20 nm. In a gate-last configuration, FD-SOI with planar transistors actually looks like it outperforms and scales significantly better than Intel’s 22 nm Tri-Gate process.”

Posted November 13, 2013   -   Share this Buzz

“French research group CEA-Leti expects to have design kits ready for a 10nm fully depleted silicon-on-insulator (FD-SOI) process in June 2014, Jean-René Lequepeys, vice president of the silicon components division told Future Horizons’ International Electronics Forum in Dublin today (4 October 2014),” reports Chris Edwards in Tech Design Forum.

Posted November 8, 2013   -   Share this Buzz

Memoir Systems has made its revolutionary Algorithmic Memory Technology available for embedded memories in ASICs and SoCs manufactured in STMicroelectronic’s FD-SOI process technology. ST is a leading manufacturer of ASICs.

“With our commitment to breakthrough memory technology, accelerated design times, and extreme high-performance, making our best-in-class Algorithmic Memory Technology available on FD-SOI was important to us and our customers, “said Sundar Iyer, co-founder and CEO at Memoir Systems. “The ease of porting, together with the performance we’ve seen, confirms that FD-SOI is faster, cooler, and simpler.”

Posted November 8, 2013   -   Share this Buzz

Bloggers for the mega Semiwiki site are warming fast to FD-SOI.  Three recent pieces have generated a lot of good comments and discussions – check them out here (links embedded):

Posted November 8, 2013   -   Share this Buzz
Peregrine Semi's new UltraCMOS 10 RF-SOI technology platform gives smartphone manufacturers unparalleled flexibility and value without compromising quality for devices ranging from 3G through LTE networks.(Photo: Business Wire)

Peregrine Semi’s new UltraCMOS 10 RF-SOI technology platform gives smartphone manufacturers unparalleled flexibility and value without compromising quality for devices ranging from 3G through LTE networks. (Photo: Business Wire)

Peregrine Semiconductor announced that it has shipped its 2 billionth chip, released version 10 of its UltraCMOS RF-SOI technology, and is working with GlobalFoundries.

UltraCMOS technology is an advanced RF-SOI process, the latest versions of which leverage bonded silicon-on-sapphire (BSOS) substrates from Soitec. Peregrine did an excellent article for ASN last spring, clearly explaining the use of sapphire as a highly insulating substrate for RF-SOI CMOS processing.

Posted November 4, 2013   -   Share this Buzz

Good, informative read: In SemiMD, FD-SOI Targets Mobile Applications by Giorgio Cesana of
ST and Carlos Mazure of Soitec. The article explains why FD-SOI is perfectly suited for mobile IC
applications where power consumption has to be very low to maximize battery lifetime. The authors
compare the technology to planar bulk and FinFETs, touching on body-biasing, substrates, design,
and circuit results/performance.

Posted October 31, 2013   -   Share this Buzz