Wondering what’s new, what’s hot and what’s next in the SOI and advanced substrate world? Check
out our Industry Buzz – now featuring regular updates.
imec’s 28Gb/s silicon photonics platform for optical interconnects and other optical applications will be included in an upcoming multiproject wafer run, reports R. Colin Johnson in EETimes (read the article here). These runs, which are on SOI wafers, are a joint effort by ePIXfab (founded by imec and Leti), Europractice IC and MOSIS. They provide a cost-effective vehicle for fabless researchers in data and telecom.Posted August 21, 2014 - Share this Buzz
Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “… results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate process.” The project is under the aegis of a French government funded program for “…the development of magnetic RAM and resistive RAM embedded memory options for the 28nm fully-depleted silicon-on-insulator (FDSOI) manufacturing process and subsequent generations.” MCU tape-out is scheduled for the end of 2014.Posted August 21, 2014 - Share this Buzz
In RF-SOI news, Peregrine and RFMD announced that they have settled all outstanding claims between the companies (read press release here). The two companies have entered into patent cross licenses and have agreed to dismiss all related litigation.
“We are pleased that we have reached agreement with RF Micro Devices and resolved all of our outstanding litigation under terms that recognize Peregrine’s unique role in the invention and commercialization of RF SOI technology,” said Jim Cable, CEO of Peregrine Semiconductor. “This agreement provides validation for the many ways in which Peregrine continues to expand the industry’s technological frontiers through both our inventions and commercial products. We look forward to continuing to solve our customers’ and partners’ toughest RF challenges.”
Bob Bruggeworth, president and CEO of RFMD, said, “We are very pleased to reach an agreement with Peregrine that recognizes the value of their patents and their contribution to the development of RF SOI. The signing of this patent cross‐license agreement allows RFMD to focus 100% on building the industry’s leading portfolio of RF solutions, making this agreement very positive for both our company and our customers.”Posted August 8, 2014 - Share this Buzz
Gold Standard Simulations Ltd. (GSS) announced a multimillion dollar contract to license its complete TCAD/EDA tool suite to GlobalFoundries (see press release here). The fully integrated and automated tool chain includes GARAND, the GSS ‘atomistic’ TCAD simulator; Mystic, the GSS statistical compact model extractor; and RandomSpice, the GSS statistical circuit simulator. The GSS tool suite is the world’s only fully integrated tool chain that performs simulation-based Design/Technology Co-Optimisation (DTCO) in advanced bulk, FD-SOI and FinFET technologies, including statistical variability and reliability.Posted August 8, 2014 - Share this Buzz
A new book entitled Silicon-On-Insulator (SOI) Technology, Manufacture and Applications (1st Edition) features contributions by experts at Soitec, GF, TSMC, Leti and more.
Billed as “a complete review of this rapidly growing high-speed, low-power semiconductor technology,” the book covers the entire SOI spectrum, from Moore to More than Moore. It goes into SOI wafer technology, electrical properties, modeling, PD-SOI, FD-SOI, FinFETs and junctionless transistors, RF, ultralow-power, photonics, memory, power and MEMS. (See Table of Contents here.) This book should be a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics, as well as for electrical engineers in the automotive and consumer electronics sectors.
Silicon-On-Insulator (SOI) Technology, Manufacture and Applications is published by Woodhead Publishing, and is also available in print and ebook forms from major online retailers such as Amazon, Elsevier and Barnes & Noble. It was compiled and edited by Oleg Kononchuk, chief scientist at Soitec, France, and Bich-Yen Nguyen, a senior fellow at Soitec, USA.Posted August 8, 2014 - Share this Buzz
Soitec estimates that it has shipped enough of its eSI wafers to fabricate more than 1.4 billion RF front-end semiconductor devices. (Read the press release here.) The proprietary Enhanced Signal Integrity™ (eSI) substrates are now the substrate of choice for manufacturing cost-effective and high-performance radio-frequency (RF) devices providing a power boost for 4G /LTE applications.
For eSI, Soitec and the Université catholique de Louvain (UCL) developed a technique that adds a “trap-rich” layer underneath the buried oxide, which freezes the parasitic surface conduction that’s inherent in any oxidized silicon substrate. (The technical details are clearly explained in an excellent ASN post by the Soitec and UCL team leaders – click here to read it.) Using a set of very specific patents, Soitec applied proprietary technology and accumulated knowledge to build the new eSI product line.
This substrate provides a raft of advantages to RF design. Because the trap-rich layer is built into the substrate, it reduces the number of process steps and relaxes design rules, leading to a highly competitive performance and die cost, including a smaller area per function. RF designers can therefore integrate diverse functions such as switches, power amplifiers and antenna tuners with excellent RF isolation, good insertion loss, better thermal conductivity and better signal integrity than other technologies. (Click here to read Soitec’s ASN post from December 2013 describing all the RF design challenges eSI answers.)Posted July 18, 2014 - Share this Buzz
ST has posted a series of helpful website page for those new to FD-SOI – click here to see it. It starts with the basics, moves onto a discussion of how FD-SOI continues Moore’s Law, and finishes with info on power efficiency, memories, analog and high-speed designs.Posted July 15, 2014 - Share this Buzz
An excellent article highlighting Leti’s work on monolithic 3D was recently published in the IEEE’s Spectrum magazine – click here to read it. In the article, Maud Vinet, manager of advanced CMOS at Leti says they’ve worked closely with ST to ensure manufacturability. “There is no major roadblock to the transfer of this technology to foundries,” she says in the article. “I feel very confident when I say that.” In case you missed it, leaders of Leti’s 3D team also published a very informative piece right here in ASN – click here to read it.Posted July 15, 2014 - Share this Buzz
Specialty foundry TowerJazz announced the availability of an enhanced RF-SOI CMOS process design kit (PDK) for its 0.18µm process technology (see press release here). The kit was developed for use with Agilent Technologies’ Advanced Design System (ADS) software and targets a wide range of analog markets including front-end modules for mobile phones, tablets and WiFi terminals.Posted June 17, 2014 - Share this Buzz
A ppt presentation by STMicroelectronics entitled Features and Benefits of 14nm UTBB* FD-SOI Technology is now posted on WeSRCH (click here to view it). It is fairly technical, covering process boosters, modules and innovations, mask sequences, performance and scalability.Posted June 17, 2014 - Share this Buzz
IBM Foundry Solutions announced a new SOI-based technology for RF called 7SW SOI. The company says it is designed for 30 percent better performance than its predecessor, 7RF SOI, with which IBM shipped over seven billion chips in the last three years. The new mobile phone chip technology can help device manufacturers provide consumers with extremely fast downloads, higher quality connections, and longer battery life than its highly successful predecessor, says an IBM spokesperson. The new technology is designed to take advantage of more frequency bands, taking phone manufacturers one step closer to the reality of creating a “world phone” that can be used anywhere.
Here are the key points:
- The new technology gives designers added flexibility, enabling them to develop chips that integrate more function or that take up to 30 percent less space, depending on design goals.
- The new technology is a hybrid 180nm/130nm technology base and devices optimized to accommodate aggressive LTE standards and demanding worldwide coverage requirements
- It is optimized for multi-band switching in next-generation smartphones.
- Poised to drive innovation in newer category of smart devices in the Internet of Things as the new technology is an ideal fit for high-band LTE and Wi-Fi 5.8 GHz band applications.
- Clients can exploit the technology advances offered by 7SW to develop solutions that enhance user experiences, including broader geographic mobility and faster data rates for high definition video.
For a helpful brochure on IBM’s RF foundry offerings, click here.Posted June 17, 2014 - Share this Buzz
SiTime, which leverages SOI for high-performance MEMS timing solutions, has introduced what it says is the smallest, lowest power 32 kHz TCXO (temperature compensated oscillator – read the press release here). With its tiny footprint and ultra-low power consumption, the SiT1552 MEMS TCXO enables a paradigm shift in the size and battery life of wearable electronics and Internet of Things (IoT); such benefits are not available from legacy quartz devices.
“The SiT1552 MEMS TCXO is 20% of the size and consumes 50% of the power of comparable quartz devices,” said Piyush Sevalia, executive vice president of marketing at SiTime. “Our MEMS enable new system architectures that offer higher performance, small size and longer battery life. With another industry first, we continue to revolutionize the timing industry with our breakthrough MEMS solutions.”
Devices are in production now. Pricing is available upon request.Posted June 8, 2014 - Share this Buzz
Soitec, the world leader in SOI wafer manufacturing, has hired a former Intel exec, Thom Degnan, to take on the job of VP of the company’s sales and bizdev for the Electronics Division in North America (read press release here). Soitec says that this strategic hiring supports the Electronics Division’s focus on mobile markets with FD-SOI wafers for digital electronics and RF-SOI wafers for RF applications.
His experience is clearly right in the sweet spot for Soitec. Prior to joining the company, Degan was vice president of business development for Intel’s Services Division and, prior to that, vice president and general manager of the Americas Region of Intel Mobile Communications. Previously he was vice president and general manager of the Americas Region of Infineon Technologies, Inc., where he was responsible for all sales, business development and marketing for the company’s Communications Division, which Intel acquired in 2011.
Degnan will be based in San Diego, California.Posted June 8, 2014 - Share this Buzz
In an EETimes blog, Handel Jones of IBS says that the Samsung-ST FD-SOI announcement represents a major opportunity. (Read full blog here.) “Samsung Electronics has a major opportunity with its large wafer capacity to support low-leakage products with its 28 nm FD-SOI process,” he wrote. “Cadence Design Systems, Synopsys, and Mentor Graphics are all supporting the FD-SOI ecosystem, and the transition from 28 nm bulk HKMG to FD-SOI should be inexpensive.” He goes on to say, “It is also important to be able to transition the smartphone vendor base to China and meet the aggressive pricing structures of the China market, which can be done with FD-SOI. Adopting FD-SOI gives a high probability of having a cost-competitive and low-power option for high-volume mobile platforms.”Posted May 28, 2014 - Share this Buzz
Peregrine Semi has shipped the first RF switches built on the company’s SOI-based UltraCMOS 10 technology platform. With partner GlobalFoundries, Peregrine also announces the completion of product and process qualification for the advanced RF-SOI technology (see press release here). The 130 nm technology combines the performance of UltraCMOS technology with the economies of SOI, and it delivers a more than 50-percent performance improvement over comparable solutions, says Peregrine. It targets the unique growth requirements for mobile applications and is the foundation for Peregrine’s next- generation RF switches, tuners and power amplifiers, including the industry’s first reconfigurable RF front end, UltraCMOS Global 1.Posted May 28, 2014 - Share this Buzz