Wondering what’s new, what’s hot and what’s next in the SOI and advanced substrate world? Check
out our Industry Buzz – now featuring regular updates.
Peregrine Semi senior marketing manager Kinana Hussain says the company’s new RF-SOI PE42722 switch “…is a game changer for the cable industry,” (see press release here). The UltraCMOS® PE42722 is a high-linearity RF switch that enables a dual upstream/downstream band architecture in cable customer premises equipment (CPE) devices. “By enabling a dual-band architecture, customers will be able to make a simple phone call to their cable service provider, who can then, ‘with the flip of a switch’, upgrade their customer’s high-speed data service plan. The added bonus of also complying with the DOCSIS 3.1 standard makes this switch a must-have for all next-generation CPE devices,” he concludes.Posted October 27, 2014 - Share this Buzz
In a piece entitled Time To Look At SOI Again (you can read it here), SemiconductorEngineering Executive Editor Mark Lapedus charts the industry’s accelerating interest in SOI, including FD-SOI and FinFETs on SOI.
He notes that FD-SOI is now planned for four generations: 28nm, 20nm, 14nm and 10nm. The offering has expanded beyond ST to Samsung and GF. He quotes GF’s Mike Mendicino as saying, “We’re seeing a lot of interest from customers (for FDSOI).”
For FinFETs, he quotes Terry Hook’s IBM presentation at the recent IEEE S3S Conference, when he said that on SOI, “…the formation of the fin is blindingly simple”. (If you missed Terry’s ASN piece last year, you can read it here.)Posted October 27, 2014 - Share this Buzz
In a blog entitled “FD-SOI Will Be Mainstream” (8 October 2014 – read it here), ElectronicsWeekly’s David Manners reports that the CEO of Synapse Design predicts FD-SOI will be a mainstream technology.
Synapse has been working in FD-SOI since 2011, has already taped out three designs and has more in the pipeline, the CEO told Manners. He sees a lot of activity coming from Japan and China in automotive and mobile as well as in network infrastructure.Posted October 17, 2014 - Share this Buzz
SOI wafer leader Soitec was awarded the Best Partnership Award by Sony Semiconductor. Soitec earned the recognition for outstanding support that has contributed to Sony’s success in the RF semiconductor market.
Soitec’s high-resistivity silicon-on-insulator (HR-SOI) wafers have long been a favorite of RF designers for 2G and 3G switches. But the company’s latest eSi substrates has taken off like wildfire, and are now used by all the major companies that make RF chips for smart phones. The eSI wafers enable much higher linearity and isolation, helping designers to address some of the most advanced LTE requirements at competitive costs. You can read more about the technical details of the wafers and how they were developed here and how they solve key challenges here.
“We are very honored to receive this award from Sony recognizing the long partnership between our companies,” said Bernard Aspar, senior vice president and general manager of Soitec’s Communication & Power Business Unit. “It demonstrates Soitec’s commitment to deliver the enabling substrates that support Sony’s RF devices business.”Posted October 17, 2014 - Share this Buzz
All the presentations made at the SOI Consortium‘s Shanghai workshops on RF-SOI and FD-SOI are now being posted.
The RF-SOI posting includes presentations from IBS, ST, UCL, Skyworks, Shanghai Technology Institute, IBM, SMIC, Soitec and GlobalFoundries – click here for those.
The FD-SOI postings include presentations from IBS, ST, Synopsys, Verisilicon, Wave Semi, IBM and GlobalFoundries – click here for those.
As of this writing, most of the presentations are available – the rest will follow very shortly so check back soon if the one you want is not there yet.
Posted September 26, 2014 - Share this Buzz
“ST needed a fast, practical method to ensure our IP would not be susceptible to noise issues, when implemented in complex, multi-million gate SoCs. We have also found we can optimize the power-supply requirements to IP in the knowledge that both the position and number of pins or bumps will be adequate for the IP as implemented,” said Pierre Dautriche, Physical IP & Mixed Design Solutions Director, Central CAD & Design Solutions, STMicroelectronics. “Extensive use here has proven WaveIntegrity as the most efficient and effective way to achieve these aims, allowing us to reduce risk in ways previously impossible. This capability is being extended to both our most advanced and older process nodes, and which we will also support for our own customers. ”
ST is using WaveIntegrity across groups designing complex IP for home and automotive devices. Getting a fast, initial picture of potential noise-related issues is vital in designing today’s complex SOCs and WaveIntegrity performs noise-analysis results right from the initial floorplan, as IP is delivered to the chip assembly team.
WaveIntegrity encourages noise-analysis results to be used during the first and subsequent floorplan stages, so that critical design decisions can be made early and at low cost. The analysis setup is then refined for the final floorplan revision to support any potential remaining noise-related design choices before final place & route.Posted September 26, 2014 - Share this Buzz
Revelations by semiwiki’s Eric Esteve that TSMC has filed a significant FD-SOI patent has generated a rush of speculation in the press and online forums. In his piece When TSMC advocates FD-SOI…, Esteve noted that TSMC’s patent for “Planar compatible FDSOI Design Architecture” (granted 14 May 2013) heralded the advantages as follows: “Devices formed on SOI substrates offer many advantages over their bulk counterparts, including absence of reverse body effect, absence of latch-up, soft-error immunity, and elimination of junction capacitance typically encountered in bulk silicon devices. SOI technology therefore enables higher speed performance, higher packing density, and reduced power consumption.”
In a subsequent article in Electronics Weekly entitled TSMC Developing FD-SOI, David Manners concluded, “Clearly all mobile IC houses are looking at FD-SOI as an option because of its lower power potential. The fact that TSMC is developing the technology suggests that a customer or customers have enquired about using FD-SOI…”.Posted September 17, 2014 - Share this Buzz
RF-SOI Pioneer Peregrine has announced new switches for wireless infrastructure and carrier-grade WiFi. The UltraCMOS® PE42442 and PE42452 high-isolation, multi-throw switches address emerging requirements in wireless infrastructure equipment (read press release here). The UltraCMOS® PE42424 RF Switch enables 802.11ac Wi-Fi access points to deliver faster data rates in high-density, bring-your-own-device environments, with 60 percent power handling increase and 75 percent smaller footprint (read press release here)
In his recent piece, A couple of misconceptions about FD-SOI (3 September 2014), semiwiki blogger and IP expert Eric Esteve corrects some assertions surfacing about FD-SOI. He reminds designers that to really benefit from FD-SOI, you want to leverage body-biasing. He explains how ST has automated the IP conversion process so it takes about half the time you’d normally expect. He also advocates FD-SOI for wearables and smartphones, as it provides both performance advantages and power savings.Posted September 11, 2014 - Share this Buzz
A thoroughly engaging and amusing LinkedIn Pulse piece by Bruce Kleinman comes down firmly on the side of 28nm FD-SOI. Entitled 28nm: Home Improvements (posted 13 August 2014), it’s subtitled, “Welcome to 28nm! Make yourself comfortable, we’re going to be here for awhile.” He says (among lots of other things, including astute observations about 3D), “…in my book 28nm FD-SOI offers very similar performance/power characteristics to 20nm bulk silicon.” Kleinman’s currently SVP at HMicro, which is doing SOC solutions for demanding wireless apps and IoT. He’s clearly got the street creds, arriving there by way of upper management at GlobalFoundries, Xilinx, HP, etc., having started out with a Stanford MSEE. A good read – recommended.Posted September 11, 2014 - Share this Buzz
An excellent article in SST details Leti’s monolithic 3D (M3D) technology, as presented at the SemiconWest 2014 Leti Day (read the full article here). Written by Brian Cronquest, MonolithIC 3D’s VP Technology & IP, the piece covers a presentation given by Olivier Faynot, Leti’s Device Department Director, about “monolithic 3D technology as the ‘solution for scaling’.” Cronquest puts the big picture in perspective, while providing plenty of technical information. He ends by reminding readers that this and other key work will be further detailed at the IEEE S3S Conference (S3S = SOI + 3D + Subthreshold Microelectronics) October 6-9, 2014 at the Westin San Francisco Airport (see the conference website here).Posted September 1, 2014 - Share this Buzz
Murata and Peregrine Semiconductor have entered into a definitive agreement under which Murata will acquire all outstanding shares of Peregrine not owned by Murata (read full press release here). Peregrine will become a wholly owned subsidiary of Murata and continue with its current business model of solving the world’s toughest RF challenges. Peregrine supplies many wireless markets, including: smartphones, test & measurement, automotive, public safety radio and wireless infrastructure. Peregrine will also provide Murata with a strong portfolio of Intellectual Property Rights (IPR) covering the entire RF-SOI front-end.
“Murata is the world’s leading RF module and filter provider, and we have benefited from our many years of partnership with them. The combination of Murata’s leading products with Peregrine’s leading-edge SOI products will position us to compete aggressively in our chosen markets,” said Jim Cable, PhD, Chairman and CEO of Peregrine Semiconductor. “As part of the Murata team, we will be able to expand our existing partnership and speed the industry’s transition to an integrated, all-CMOS RF front-end. We remain committed to providing leading solutions to customers in all our current markets. We have huge respect for Murata’s capabilities, and look forward to jointly accomplishing great things.”Posted September 1, 2014 - Share this Buzz
imec’s 28Gb/s silicon photonics platform for optical interconnects and other optical applications will be included in an upcoming multiproject wafer run, reports R. Colin Johnson in EETimes (read the article here). These runs, which are on SOI wafers, are a joint effort by ePIXfab (founded by imec and Leti), Europractice IC and MOSIS. They provide a cost-effective vehicle for fabless researchers in data and telecom.Posted August 21, 2014 - Share this Buzz
Peter Clark at Electronics360 wrote about a recent presentation by an STMicroelectronics research team using hafnium oxide for non-volatile embedded memory. (Read the full article here.) The results were given at a Leti memory workshop in June 2014. The team presented, “… results for a 16-kbit OxRAM test chip implemented in 28nm high-k metal gate process.” The project is under the aegis of a French government funded program for “…the development of magnetic RAM and resistive RAM embedded memory options for the 28nm fully-depleted silicon-on-insulator (FDSOI) manufacturing process and subsequent generations.” MCU tape-out is scheduled for the end of 2014.Posted August 21, 2014 - Share this Buzz
In RF-SOI news, Peregrine and RFMD announced that they have settled all outstanding claims between the companies (read press release here). The two companies have entered into patent cross licenses and have agreed to dismiss all related litigation.
“We are pleased that we have reached agreement with RF Micro Devices and resolved all of our outstanding litigation under terms that recognize Peregrine’s unique role in the invention and commercialization of RF SOI technology,” said Jim Cable, CEO of Peregrine Semiconductor. “This agreement provides validation for the many ways in which Peregrine continues to expand the industry’s technological frontiers through both our inventions and commercial products. We look forward to continuing to solve our customers’ and partners’ toughest RF challenges.”
Bob Bruggeworth, president and CEO of RFMD, said, “We are very pleased to reach an agreement with Peregrine that recognizes the value of their patents and their contribution to the development of RF SOI. The signing of this patent cross‐license agreement allows RFMD to focus 100% on building the industry’s leading portfolio of RF solutions, making this agreement very positive for both our company and our customers.”Posted August 8, 2014 - Share this Buzz