Industry’s First InP-based HBT on Silicon
Posted by Thomas KAZIOR (Raytheon RF Components) on July 16, 2008In Advanced Substrate Corners, ASN #10, III-V
Tagged with apps, high-perf, high-temp, III-V, mil/aero, rf, Soitec
Advanced engineered substrates are a key to the Raytheon-led DARPA COSMOS project to integrate compound semiconductors and silicon CMOS on a single chip. In what we believe to be an industry first, a Raytheon Company-led team has demonstrated the industry’s first Indium Phosphide (InP)-based heterojunction bipolar transistor (HBT) fabricated on a silicon wafer. HBTs are …
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