Editor's blog
ST-Ericsson’s Next-gen NovaThor: This Year, at 28nm, on FD-SOI Wafers from Soitec
March 13, 2012 - Big and official FD-SOI news: Soitec has announced that the company is supplying the FD-SOI wafers for ST-Ericsson's next-generation of NovaThor 8540 smartphone/tablet pr...
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Industry Buzz
- STMicroelectronics predicts its new SOI-based STOD13AS power chip could be used in nearly every new smartphone or small electronic device that has an AMOLED display - Courtesy: STMicroelectronics - STMicroelectronics predicts its new SOI-based STOD13AS power chip could be used in nearly every new smartphone or small...
- Imec and Genalyte have successfully developed and produced a set of disposable SOI-photonics biosensor chips for Genalyte's diagnostic and molecular detection equipment - SOI wafer with photonics biosensorchips. (Courtesy: imec) - Imec and Genalyte have successfully developed and produced a set of disposable SOI-photonics...
- The international Sematech consortium announced that SOI wafer leader Soitec has joined the Front End Processes (FEP) and Advanced Metrology Programs - The international Sematech consortium announced that SOI wafer leader Soitec has joined the Front End Processes (FEP) and Advanced Metrology Programs. Soitec...
- Skyworks credits part of its Q1 FY12 success to having commenced volume production of advanced SOI-based Antenna Switch Modules (ASMs) for Huawei - Skyworks credits part of its Q1 FY12 success to having commenced volume production of advanced SOI-based Antenna Switch Modules (ASMs) for Huawei. With ongoing...
- Soitec and Sumitomo Electric are launching pilot production of 4” and 6” GaN wafers for the LED and power markets - World-leading advanced substrate maker Soitec and compound materials leader Sumitomo Electric are launching pilot production of 4” and 6” GaN wafers for...
- Grace Semiconductor has added 0.13um SOI RF CMOS to its Technology Roadmap for Q2 2011 - Grace Semiconductor, a leading foundry in China, added 0.13um SOI RF CMOS to its Technology Roadmap in Q2 2011. (Courtesy: Grace...
- NXP unveiled its ultra-compact, high-precision SOI-MEMS-based frequency synthesizer - At CES 2012, NXP unveiled its ultra-compact, high-precision SOI-MEMS-based frequency synthesizer as an alternative to quartz crystal-based timing devices....
- Skyworks has launched two new SOI CMOS single-pole, triple-throw (SP3T) switches - Skyworks has launched two new SOI CMOS single-pole, triple-throw (SP3T) switches, the SKY13345-368LF and the SKY13385-460LF. With their high linearity...
- IBM will produce Micron's Hybrid Memory Cube (HMC) in the debut of the first commercial, 3D chip-making - IBM will produce Micron's Hybrid Memory Cube (HMC) in the debut of the first commercial, 3D chip-making. HMC parts will be manufactured at IBM's advanced...
- IBM's SOI-based BlueGene/Q takes the top 5 spots on the latest “Green500” list of energy-efficient supercomputers. - IBM's SOI-based BlueGene/Q takes the top 5 spots on the latest “Green500” list of energy-efficient...
- NXP's latest automotive audio amplifiers are built on its SOI-based ABCD technology - NXP's latest automotive audio amplifiers are built on its SOI-based ABCD technology, and enable an uninterrupted audio experience during sudden supply voltage...
- The new 32nm SOI Bulldozer-based AMD Opteron™ Processors will power the National Science Foundation's Blue Waters project - The new 32nm SOI Bulldozer-based AMD Opteron™ Processors will power the National Science Foundation's Blue Waters project. Per the TOP500 Supercomputers...
- Freescale's new Xtrinsic MMA65xxKW family of accelerometers for advanced airbag sensors - Freescale's new Xtrinsic MMA65xxKW family of accelerometers for advanced airbag sensors leverages SOI-based high-aspect-ratio (HAR) MEMS technology, which...
- Dr. Justin Wang has joined Soitec as senior vice president, corporate marketing and strategy - Dr. Justin Wang has joined Soitec as senior vice president, corporate marketing and strategy. He is an industry veteran with over 15 years of experience in...
- Freescale is sampling the first PSC913x family of “base station-on-chip” products built on its innovative 45nm SOI-based QorIQ Qonverge multimode platform. - Freescale is sampling the first PSC913x family of “base station-on-chip” products built on its innovative 45nm SOI-based QorIQ Qonverge multimode platform....
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Calendar
- IEEE/EDS International Memory Workshop (IMW)
  Milano, Italy
  May 20–23, 2012
- IEEE Workshop on Low Temperature Bonding for 3D Integration
  Hongo, Japan
  May 22–23, 2012
- International Conference on IC Design and Technology (ICICDT)
  Austin, TX, USA
  May 30–1, 2012
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Paperlinks

IEDM 11: The SOI Papers

ISSCC 2011

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Back Issues
- ASN #18
- ASN #17
- ASN #16
SOI on the Roadmaps

• FD-SOI: ST & 28nm SOCs; ARM & design porting

• Apps – NXP automotive sensors, AMD 32nm Bulldozer

• SOI Conference (IBM, Intel, Leti, GloFo, ST, ARM, Peregrine & more)

• SOI Consortium – FD-SOI whitepaper overview & excerpts

FD-SOI: The Right Choice & more

• Planar FD-SOI - wafers, Consortium update

• Apps – Xbox 360 CPU/GPU, ST/power

• GlobalFoundries on ESD

• Wafer stacking, MEMS, photonics & more

SOI & The Lighting Revolution; Wafers for FD-SOI

• Soitec's wafers for FD-SOI

• Special supplement: SOI Industry Consortium

• Lighting apps: NXP+SOI=better CFLs

• ARM & SPICE, Industry Buzz and more

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Articles by Shuqing (Victor) CAO

Shuqing (Victor) CAO has written 1 articles on Advanced Substrate News.

Dr. Shuqing (Victor) Cao graduated from Stanford University in 2010 and joined GlobalFoundries. He would like to gratefully acknowledge the key coauthors of his work: Drs. Stephen Beebe (GlobalFoundries), Akram Salman (TI), Prof. Jung-Hoon Chun (Sungkyunkwan University), Drs. Warren Anderson (AMD), Mario Pelella (tau-Metrix) and his Ph.D. advisor Prof. Robert Dutton; SRC-GRC and Stanford fellowships.

ESD Protection for Advanced SOI

Posted by Shuqing (Victor) CAO (GlobalFoundries) on May 4, 2011
In ASN #17, Design & Manufacturing, In & Around Our Industry
Tagged with ESD, GlobalFoundries

Deeply scaled PD- and FD-SOI require new approaches to ESD protection. Recent work from Stanford and GlobalFoundries on gate controlled FEDs shows great promise. Technology scaling unfavorably affects the electrostatic discharge (ESD) protection of integrated circuits mainly by reducing MOSFET oxide and junction breakdown voltage, diode current shunting capability, and by increasing the interconnect resistivity. …

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Articles by Shuqing (Victor) CAO

ESD Protection for Advanced SOI