Self-Heating Effect and Variability in Gate-All-Around (GAA) Silicon Nanowire Transistors (SNWT)
Posted by Professor Ru HUANG (Peking University) on December 8, 2010In Advanced Substrate Corners, ASN #16, Professor's Perspective
Tagged with China, GAA, MuGFET, SNWT
Researchers in academia have partnered with industry to increase understanding of critical issues in advanced non-classical CMOS devices. Highly scaled devices present a new range of challenges with respect to critical issues such as leakage current, short-channel effects, high-field effects, variability, reliability, noise and parasitic impact. Device structure and material innovation are the primary enablers …
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