Composite Substrates Promise Boost for GaN RF
Posted by Philippe BOVE (Soitec) on December 6, 2006In Advanced Substrate Corners, ASN #6, III-V
Tagged with GaN, R&D, rf, SiC, Soitec, wafers
Results of the HYPHEN project indicate a new path to high-volume, high-power, and high-frequency wireless applications. The European HYPHEN GaN-RF project is developing and evaluating new types of composite substrates based on silicon and silicon carbide materials. These new substrates are designed to provide cost-efficient solutions for advanced high-power devices used in wireless communication systems …
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