ASN

Articles by Olivier FAYNOT

Olivier FAYNOT

Olivier FAYNOT has written 3 articles on Advanced Substrate News.

Olivier Faynot is Microelectronic Section Manager, CEA-LETI, one of the world's leading applied research centers for microelectronics. He has published over 140 papers, and is on the committees for the major international conferences. He holds a Ph.D. from the Institut National Polytechnique de Grenoble.

Leti: Adding Strain to FD-SOI for 20nm and Beyond Thumbnail

Leti: Adding Strain to FD-SOI for 20nm and Beyond

Posted by and (CEA-Leti) on April 30, 2012
In Advanced Substrate Corners, ASN #19, R&D/Labnews
Tagged with , , , , , , , , , , , , , ,

Work at Leti shows that strain is an effective booster for high-performance at future nodes. The outstanding electrostatic performance already reported for planar FD-SOI technology can be improved by the use of ION boosters in order to target-high performance applications, as already demonstrated in the past. As illustrated in Figure 1, strain can be incorporated […]

Continue ReadingView Comments (1)
Sources Discovered Thumbnail

Sources Discovered

Posted by (CEA-Leti) on May 27, 2009
In Advanced Substrate Corners, ASN #12, Conferences
Tagged with , , , ,

Leti, Soitec and ST have discovered the sources of threshold voltage variation in undoped, ultrathin FD-SOI architectures. At the most recent IEDM conference, researchers from Leti, Soitec and STMicroelectronics presented a paper entitled, “High Immunity to Threshold Voltage Variability in Undoped Ultra-Thin FDSOI MOSFETs and its Physical Understanding” (O. Weber et al, IEDM 2008).

Continue ReadingLeave a Comment
The Promise of FD-SOI for Low Power Applications Thumbnail

The Promise of FD-SOI for Low Power Applications

Posted by (CEA-Leti) on May 14, 2008
In Advanced Substrate Corners, ASN #9, R&D/Labnews
Tagged with , , , ,

CEA-LETI reports on FD-SOI technology developed for the 32nm node and beyond. A Fully Depleted SOI CMOS technology has been developed at CEA-LETI for Low Power applications at 32nm nodes and below. For years, fully depleted devices have been considered as electrostatic boosters due the fact that they benefit from smaller short channel effects than […]

Continue ReadingLeave a Comment