Nanomembranes: Just Around the Bend
Posted by Max G. LAGALLY (UW Madison) on December 6, 2006In Advanced Substrate Corners, ASN #6, Professor's Perspective
Tagged with R&D, sensors, SOI
Starting with SOI wafers, Professor Lagally’s team has developed strain-engineered silicon nanomembranes that could pave the way to flexible, high-speed circuits and more. SOI, beyond its well-known use in CMOS devices, provides the foundation for a new class of structures: strain engineered Si nanomembranes. These membranes offer the promise for new devices or increased performance …
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