A Perspective on Multi-Gate MOSFETs
Posted by Jerry G. FOSSUM (UF Gainesville) on May 11, 2007In Advanced Substrate Corners, ASN #7, Professor's Perspective
Tagged with 20/22nm, design, FD-SOI, FinFET, Freescale, R&D
One of the world’s leading experts, Professor Fossum explains why SOI represents a pragmatic approach to future transistor generations. Based on our recent studies of multi-gate MOSFETs (“MuGFETs”) for CMOS applications, which are mainly modeling- and simulation-based with experimental support from Freescale Semiconductor, we have suggested that nanoscale FinFETs can and should be designed pragmatically, …
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