On the Leading Edge
Posted by Jean-Pierre COLINGE (Tyndall) on July 26, 2010In Advanced Substrate Corners, ASN #15, Professor's Perspective
Tagged with FD-SOI, Leti
Key advances in transistor research start on SOI. SOI has always been the substrate of choice to explore new silicon device concepts and structures. The full dielectric isolation of the silicon allows one to dismiss the sometimes complex junction isolation schemes used in bulk silicon. The possibility of making devices in thin silicon films has …
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