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Articles by Jean-Luc LEDYS

Jean-Luc LEDYS

Jean-Luc LEDYS has written 4 articles on Advanced Substrate News.

CEO, Picogiga International

A GaN Approach to Schottky Diodes Thumbnail

A GaN Approach to Schottky Diodes

Posted by Jean-Luc LEDYS (Soitec) on October 31, 2007
In Advanced Substrate Corners, ASN #8, III-V
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The G²REC program aims to create a new generation of energy-efficient power devices for high-volume applications over 250V. The greater electronics industry has an urgent need for fast-switching, high-voltage, energy-efficient and cost-competitive rectifiers. Rectifiers (which convert AC to DC) are comprised of diodes, components that ensure electricity flows in just one direction. For certain high-volume …

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Picogiga Sampling First Compound Substrate Optimized for GaN Devices Thumbnail

Picogiga Sampling First Compound Substrate Optimized for GaN Devices

Posted by Jean-Luc LEDYS (Soitec) on May 11, 2007
In Advanced Substrate Corners, ASN #7, III-V
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Jean-Luc Ledys explains how SopSiC can solve the GaN substrate dilemma. Picogiga International, a division of the Soitec Group recently announced pre-production availability of SopSiC, a Smart Cut™ engineered substrate for gallium nitride (GaN) based power-switching and high-frequency devices. Customer response has been very positive.

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Innovative Substrate Opportunities in GaN RF-Defense Applications

Posted by Jean-Luc LEDYS (Soitec) on July 11, 2006
In Advanced Substrate Corners, ASN #5, III-V
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The KORRIGAN program will provide a forum for suppliers and system houses to confirm new approaches. KORRIGAN is a very important program in terms of GaN material and device development, giving suppliers the opportunity to demonstrate technology and products to European defense companies. This complements cooperation and business relations with Asian or US based customers …

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New Options for GaN RF Thumbnail

New Options for GaN RF

Posted by Jean-Luc LEDYS (Soitec) on December 7, 2005
In Advanced Substrate Corners, ASN #3, III-V
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Smart Cut™ enables innovative substrate solutions GaN HEMT technology holds enormous promise for increasing the power of commercial RF applications. However, challenges both technological and economic remain to be resolved before GaN can realize its full potential beyond the very high-end niche.

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