GaN for High-Power RF
Posted by Dr. Herve BLANCK (United Monolithic Semiconductors) on May 14, 2008In Advanced Substrate Corners, III-V
Tagged with design, embedded, foundry, GaN, mil/aero, power, rf, ums
UMS, which is jointly owned by Thales and EADS, is moving forward on GaN for some key applications. United Monolithic Semiconductors (UMS) is a leader in the design, manufacturing and marketing of advanced semiconductor technology for a number of specialized application areas. The company sees advantages in moving from GaAs to GaN for some of …
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