KORRIGAN Initiative Federates European GaN Efforts
Posted by François MURGADELLA, François REPTIN, Gildas GAUTHIER, and Yves MANCUSO (French Defense Procurement Agency) on July 11, 2006In Advanced Substrate Corners, III-V
Tagged with GaN, III-V, power, rf
Systems houses and research labs from seven European nations are working together on GaN HEMT technology for critical defense applications. Defense radar and communication systems as well as wireless communication systems have a drastic need for increased RF performance and high-power, high-efficiency, high-linearity and low-cost monolithic amplifiers operating in the 1–40 GHz frequency range.
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