Wafers for Fully Depleted SOI Devices: Ready for Volume
Posted by Christophe MALEVILLE (Soitec) on December 8, 2010In ASN #16, Design & Manufacturing, In & Around Our Industry
Tagged with FD-SOI, Soitec, wafers
A technological tour-de-force, Soitec’s wafers for FD SOI meet all the requirements At the 20 nm node, short channel effects and random dopant fluctuations (RDF) are the major hurdles facing the CMOS industry. An extremely attractive solution is the planar, ultra-thin body Fully-Depleted (FD) SOI transistor. These devices are built on an ultra-thin SOI substrate, …
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