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Articles by Changhwan SHIN

Changhwan SHIN has written 2 articles on Advanced Substrate News.

The right choice for 22nm SRAM Thumbnail

The right choice for 22nm SRAM

Posted by Changhwan SHIN and Tsu-Jae KING LIU (UC Berkeley) on December 4, 2009
In Advanced Substrate Corners, ASN #14, Professor's Perspective
Tagged with , , , , ,

What is the best transistor structure to meet SRAM performance and yield requirements at the 22nm node? The semiconductor device research group at UC Berkeley pioneered the FinFET structure in 1998. Now SOI-based FinFETs lead the field of candidate structures to eventually replace the planar bulk MOSFET. In the near term, yield and manufacturability may …

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