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Articles by Bich-Yen NGUYEN

Bich-Yen NGUYEN

Bich-Yen NGUYEN has written 2 articles on Advanced Substrate News.

Senior Fellow, Soitec

SOI Substrates Meet Needs of Advanced Devices Thumbnail

SOI Substrates Meet Needs of Advanced Devices

Posted by Bich-Yen NGUYEN (Soitec) on May 14, 2008
In Advanced Substrate Corners, ASN #9, R&D/Labnews
Tagged with , ,

The ITRS calls for ultra-thin body devices to enter manufacturing in just a few years. The stringent SOI substrate requirements are met with high-volume manufacturing technology. SOI technology is developing toward Ultra-Thin Body (UTB) semiconductor layers with fully depleted (FD-SOI) and Multiple Gate FETs (MuGFETs), consistent with the latest version of the ITRS. The current …

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Enhanced Strained Silicon-On-Insulator CMOS Devices Thumbnail

Enhanced Strained Silicon-On-Insulator CMOS Devices

Posted by Bich-Yen NGUYEN (Freescale) on July 11, 2006
In ASN #5, Design & Manufacturing, In & Around Our Industry

Freescale has investigated a selective biaxial-uniaxial strain hybridization method that significantly enhances drive current without adding process complexity. It has become increasingly difficult to scale CMOS transistors, yet still maintain high drive currents and simultaneously reduce supply voltage (Vdd). This is because threshold voltage and gate oxide thickness cannot be scaled at the same rate …

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