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Industry Buzz

INDUSTRY BUZZ

  • January 22, 2015 - Leti's M3D technology is now called "CoolCube". (Courtesy: Leti, IEDM 2014) - Leti’s monolithic 3D technology, which has now been dubbed “CoolCube”, was featured in a recent EETimes piece. Entitled True 3D monolithic integration eliminates TSV dependence (click here to read it), the article covers a Leti paper presented during a 3D-VLSI workshop preceding IEDM’14. Leti’s... Read more »
  • January 22, 2015 - Paul Boudre has been named CEO of Soitec. - Paul Boudre has been named CEO of SOI wafer leader, Soitec (see financial press release here). The company also announced its plans to re-focus on its core electronics business unit. - Q3 sales were 48 million euros, up 45% over last year. The sale of 200mm wafers (which are used in chips for RF-SOI and smartpower) were almost doubled from... Read more »
  • January 12, 2015 - A new interactive WebEx webinar on FD-SOI design sponsored by CMC Microsystems has been posted. Entitled Design and Characterization of Circuits and Devices in the ST 28nm Fully-Depleted Silicon-On-Insulator (FD SOI) (click hereto view it), it features two presentations by University of Toronto professors based on their recent experiences with circuit design in the ST’s 28nm FDSOI... Read more »
  • January 12, 2015 - New record solar cell on a 100 mm wafer yielding approximately 500 concentrator solar cell devices. (©Fraunhofer ISE/Photo Alexander Wekkeli) - A new world record of 46% for the direct conversion of sunlight into electricity was recently established by Soitec, Leti and the Fraunhofer Institute for Solar Energy Systems ISE (read the press release here). Multi-junction cells are used in... Read more »
  • January 9, 2015 - The IEEE SOI-3D-Subthreshold Microelectronics TechnologyUnified Conference (IEEE S3S) has issued the 2015 Call for Papers. - Now in its 3rd year as a combined event, the 2015 IEEE S3S Conference will take place in Sonoma Valley, CA, just north of San Francisco, October 5-8. This industry-wide event will gather together widely known experts, contributed papers and invited talks on three... Read more »
  • January 9, 2015 - There’s been a significant uptick in patents related to fully-depleted SOI, according to a new report byKnowMade(clickhereto getthe report brochure). The report looks at both FD-SOI and SOI-FinFETs (both of which are fully depleted technologies). More than 740 patent families have been published to date, of which planar FD-SOI accounts for 340 families. Following a rush of activity... Read more »
  • January 7, 2015 - SOI wafer and advanced substrate leader Soitec and Korea’s SK Innovation (SKI) recently signed a Collaboration Agreement (CA) to establish a strategic alliance (read the press release here). The focus is on accelerating innovation in the area of semiconductor materials for information communication technologies and internet-of-things applications. - The collaborative partnership will... Read more »
  • January 7, 2015 - Samsung’s “28FDSOI comes with a complete design ecosystem (PDK, Library, IP, and DFM),” says Kelvin Low in a blog entitled, “2014, What a Year It’s Been for Samsung Foundry. (Click here to read it.) Kelvin’s Senior Director, Foundry Marketing at Samsung Semiconductor, Inc. Samsunglicensed the process technologyfrom ST in May 2014. “Customers who are looking to manufacture... Read more »
  • December 9, 2014 - Under a new agreement, Simgui now has the exclusive right to promote, distribute and sell Soitec’s 200-mm SOI wafers in China (see press release in Englishhere; Chinese versionhere). Soitec is the world's leading producer of SOI wafers. Shanghai Simgui Technology Co., Ltd. (Simgui), a Shanghai-based semiconductor materials company, is a spinoff of the Shanghai Institute of Microsystem... Read more »
  • December 8, 2014 - The Orion Lightspeed™ inspection system by Altatech (a division of Soitec) pinpoints the true size and location of nano-scale defects inside compound semiconductor materials and transparent substrates - Two new products from semi equipment manufacturer Altatech: one for ultra-thin film deposition, and one for searching out nano-defects. Altatech is a division of Soitec, best known in... Read more »
  • November 3, 2014 - SOI-MEMS timing device leader SiTime Corporation is being acquired by MegaChips Corporation,a top 25 fabless semiconductor company based in Japan for $200 million in cash. (read the press release here). This transaction combines two complementary fabless semiconductor leaders that provide solutions for the growing Wearables, Mobile and Internet of Things markets. - “MEMS components... Read more »
  • November 3, 2014 - Soitec, a leader in SOI wafers and other advanced substrates, recently announced the sale of its gallium arsenide (GaAs) epitaxy business (the Soitec Specialty Electronics subsidiary) to Intelligent Epitaxy Technology Inc (see press release here). The deal follows the previous collaboration between Soitec and IntelliEPI (see press release dated December 12, 2013). - “The sale of our... Read more »
  • October 27, 2014 - Peregrine Semi's new RF-SOI based UltraCMOS® PE42722 high-linearity RF switch allows customer premises equipment (CPE) vendors to future proof their devices to meet the strict linearity requirements of the DOCSIS 3.1 Cable Industry Standard (Courtesy: Peregrine Semi) - Peregrine Semi senior marketing manager Kinana Hussain says the company's new RF-SOI PE42722 switch “...is a game... Read more »
  • October 27, 2014 - In a piece entitled Time To Look At SOI Again (you can read it here), SemiconductorEngineering Executive Editor Mark Lapedus charts the industry's accelerating interest in SOI, including FD-SOI and FinFETs on SOI. - He notes that FD-SOI is now planned for four generations: 28nm, 20nm, 14nm and 10nm. The offering has expanded beyond ST to Samsung and GF. He quotes GF's Mike Mendicino as... Read more »
  • October 17, 2014 - In a blog entitled “FD-SOI Will Be Mainstream” (8 October 2014 – read it here), ElectronicsWeekly'sDavid Manners reports that the CEO of Synapse Design predicts FD-SOI will be a mainstream technology. - Synapse has been working in FD-SOI since 2011, has already taped out three designs and has more in the pipeline, the CEO told Manners. He sees a lot of activity coming from Japan... Read more »

Latest posts
2015 – Turning the Tables for FD-SOI, RF-SOI and More Thumbnail

2015 – Turning the Tables for FD-SOI, RF-SOI and More

Posted by on January 22, 2015
In Editor's Blog
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If current momentum is any indication, 2015 will be the year the tables turn in favor of FD-SOI designs (with a big shout-out to IoT).  The RF-SOI juggernaut will continue cutting an enormous swath through the mobile market.   Attention to the exciting possibilities of monolithic 3D (M3D) technology (like Leti’s “CoolCube”) will continue to grow, […]

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SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage) Thumbnail

SOI for MEMS, NEMS, sensors and more at IEDM ’14 (Part 3 of 3 in ASN’s IEDM coverage)

Posted by on January 12, 2015
In Conferences, Paperlinks, R&D/Labnews
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Important SOI-based developments in MEMS, NEMS (like MEMS but N for nano), sensors and energy harvesting shared the spotlight with advanced CMOS and future devices at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 3, we’ll […]

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SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage) Thumbnail

SOI-based future device structures at IEDM ’14 (Part 2 of 3 in ASN’s IEDM coverage)

Posted by on January 9, 2015
In Conferences, Paperlinks, R&D/Labnews
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Beyond FD-SOI and FinFETs, important SOI-based developments in advanced device architectures including nanowires (NW), gate all around (GAA) and other FET structures shared the spotlight at IEDM 2014 (15-17 December in San Francisco). IEDM is the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. Here in Part 2 of […]

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10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage) Thumbnail

10nm FD-SOI, SOI FinFETs at IEDM ’14 (Part 1 of 3 in ASN’s IEDM coverage)

Posted by on December 31, 2014
In Conferences, Paperlinks, R&D/Labnews
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FD-SOI at 10nm (and other nodes) as well as SOI FinFETs shared the spotlight at IEDM 2014 (15-17 December in San Francisco), the world’s showcase for the most important applied research breakthroughs in transistors and electronics technology. There were about 40 SOI-based papers presented at IEDM. Here in Part 1 of ASN’s IEDM coverage, we […]

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Successful RF-SOI 2014 International Symposium Held in Shanghai Thumbnail

Successful RF-SOI 2014 International Symposium Held in Shanghai

Posted by and on December 5, 2014
In Conferences
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A very successful international workshop on RF-SOI was held in Shanghai earlier this fall.  Jointly organized by industry leaders, it brought together world-class players in RF to discuss the opportunities and challenges in rapid development of RF applications. Sponsors included the SOI Industry Consortium, the Chinese Academy of Sciences (CAS) / Shanghai Institute of Microsystem […]

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