Tagged with conference, CoolCube, FD-SOI, Leti, ST
FD-SOI will be featured in the upcoming Symposia on VLSI Technology & Circuits (Honolulu, Hawaii from June 13-17, 2016 – click here for more info). The theme of the conference is “Inflections for a Smart Society,” and luminaries from throughout the SOI ecosystem will be featured in presentations, short courses and panel discussions.
A short course entitle “Circuit Design in FinFET, FDSOI & Advanced Memory Technologies” includes talks by Borivoje Nikolić of UC Berkely on SRAM and digital logic in UTBB FD-SOI, and by Andreia Cathelin of ST on FD-SOI Technology, Advantages for Analog/RF and Mixed-Signal Designs.
Leti and ST will be giving a featured paper (T17.3) on CoolCube™, a full 3D VLSI CMOS-over-CMOS integration on 300mm wafers, with the top level CMOS devices fabricated using low temperature (less than 650°C) processes, compatible with state-of-the-art high performance FD-SOI devices.