Industry Buzz

The Paul Scherrer Institute reports that they have achieved strained silicon nanowires with the highest strain ever

Posted on December 4, 2012
Tagged with , , , ,
Strained silicon nanowires

(Graphics: Paul Scherrer Institut/ R. Minamisawa)

Starting on SOI, the Paul Scherrer Institute reports in Nature that they have achieved strained silicon nanowires with the highest strain ever (4.5% elastic strain).

The principle of the method used for achieving a high stress in silicon: Firstly, the forces act in all directions in the silicon layer. If small parts of the layer are then etched away to create a thin wire, the forces act along the wires so that a high stress is created within them.