Tagged with FD-SOI, Fully Depleted, Leti, R&D, ST
For their work on FD-SOI, four researchers from STMicroelectronics and Leti have received the 2012 Général Ferrié Award, considered the highest award in electronics R&D in France. Claire Fenouillet-Béranger and Olivier Faynot from Leti, and Stéphane Monfray and Frédéric Bœuf from ST are credited with validating the technological choice for FD-SOI, while also enabling its industrialization. They identified three key FD-SOI advantages:
– the production process is very close to bulk
– porting circuits from bulk to FD-SOI technology is significantly easier than porting to FinFETs
– the technology is very attractive for mobile applications such as smartphones and tablets, which simultaneously require high performance and low power consumption.