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Industry Buzz

INDUSTRY BUZZ

  • February 12, 2016 - Peregrine Semiconductor’s new 75-ohm glitch-less RF digital step attenuator, the UltraCMOS® PE4314, is ideal for wired broadband applications. - RF-SOI pioneer Peregrine Semiconductor has announced theUltraCMOS® PE4314, a 75-ohm glitch-less RF digital step attenuator (DSA). This new DSA extends Peregrine’s existing glitch-less DSA portfolio to 75 ohms. The PE4314 is ideal for... Read more »
  • February 8, 2016 - Professor Jean-Pierre Raskin (right) receiving the Blondel Medal for his industry-changing work on RF-SOI. Jury president Professor Pere Rocal I Cabarrocas (left) of the Ecole Polytechnique - Université Paris-Saclay presented the prize. - RF-SOI substrate guru Jean-Pierre Raskin, whose team at UCL* has driven the technology behind the most advanced wafer substrates for RF applications,... Read more »
  • February 3, 2016 - Design & Reuse, in partnership with GlobalFoundries, ST, Soitec and Leti, is sponsoring a series of FD-SOI IP Workshops around the globe. (Click here for more information.) These working days aim at sharing information about IP that’s currently available or is being designed for FD-SOI technology. - The first conference will take place during DATE in Dresden on 14 March 2016.... Read more »
  • December 23, 2015 - Mentor Graphics is collaborating with GlobalFoundries on 22nm FD-SOI to qualify the Mentor® RTL to GDS platform for the current version of GlobalFoundries 22FDX™ platform reference flow. (Read the press release here.) This includes including Mentor's RealTime Designer™ physical RTL synthesis solution and Olympus-SoC™ place & route system. In addition, Mentor and GF are... Read more »
  • December 22, 2015 - Peregrine Semiconductor’s new UltraCMOS® PE44820 is an 8-bit digital phase shifter that delivers exceptional phase accuracy and high linearity for active antenna applications. - RF-SOI pioneer Peregrine Semiconductor has introduced the UltraCMOS® PE44820, an 8-bit digital phase shifter designed for active antenna apps, covering a 358.6-degree phase range. (Read the press release... Read more »
  • December 19, 2015 - Soitec CEO Paul Boudre - VLSI Research Chip Insider has named Soitec CEO Paul Boudre to its roster of 2015 All Stars of the Semiconductor Industry. (See the announcement here.) - Boudre was cited for “...successfully re-organizing Soitec back to its core business as a leading innovative engineered substrate supplier. His first year results are already astounding, with very high growth... Read more »
  • December 17, 2015 - The IEEE S3S (SOI/3D/SubVt) has issued its call for papers for the 2016 conference (click here for details). The theme of the conference, which will take place October 10th – 13th in San Francisco, is "Energy Efficient Technology for the Internet of Things". This industry-wide event gathers together widely known experts, contributed papers and invited talks focused on SOI Technology,... Read more »
  • December 8, 2015 - Citing strong RF-SOI demand, TowerJazz has signed an agreement to purchase Maxim’s 8-inch fab in San Antonio, Texas (shown here). - With the acquisition of Maxim’s 8-inch fab in San Antonio, Texas, TowerJazz plans to quickly qualify its core specialty technologies, including its advanced Radio-Frequency Silicon-on-Insulator (RF-SOI) offering, to serve the substantial growth in... Read more »
  • December 8, 2015 - CEA-Leti announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed or lower power consumption and improved performance. (For more details, read the press release here.) Targeting the 22/20nm node, the local-strain solutions are dual-strained technologies: compressive SiGe for PFETs and tensile Si... Read more »
  • November 30, 2015 - Toshiba has announced TaRF8, the next generation in the company's TarfSOI™ (aka Toshiba advanced RF SOI) process, which is optimized for RF switch apps. The first product to use the technology is Toshiba's new SP12T, enabling the lowest-class of insertion loss in the industry. Lowering insertion loss is recognized as particularly important in decreasing RF transmission power loss,... Read more »
  • November 30, 2015 - A recent NewElectronics article entitled ST’s FD-SOI transistor is set to give analogue designers a new knob to tune parameters, explores the many reasons that FD-SOI makes designers happy – even the analog folks. Editor Graham Pitcher talked to analog designer Andreia Cathelin, a senior member of STMicroelectronics’ technical staff. Among plenty of other things, she noted that... Read more »
  • November 27, 2015 - Cadence has announced that its digital and signoff tools are now enabled for the current version of the GLOBALFOUNDRIES® 22FDX™ platform reference flow (see press release here). GF has qualified these tools for the 22FDX reference flow to provide customers with the design flexibility of software-controlled body bias to manage power, performance and leakage needed to create... Read more »
  • November 27, 2015 - The 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, aka EUROSOI-ULIS 2016 will be taking place January 25-27, 2016 in Vienna, Austria. The event will be hosted by the Institute for Microelectronics, TU Wien. The focus of the sessions is on SOI technology and advanced nanoscale devices. The organizing committee invites active... Read more »
  • November 23, 2015 - Synopsys has announced a comprehensive RTL-to-GDSII solution for GlobalFoundries 22nm technology process. The implementation and signoff tools from the Synopsys Galaxy™ Design Platform have been enabled for the current version of GF's' 22FDX™ platform reference flow. GF has qualified these tools to use body bias to manage power, performance and leakage to achieve optimal energy... Read more »
  • November 23, 2015 - ATopTech, a leader in next-generation physical design solutions, has announced that their Aprisa™ and Apogee™ Place & Route tools are now enabled for the current version of the GlobalFoundries 22FDX™ platform reference flow. GF has qualified these tools for the 22FDX reference flow to provide customers with the design flexibility of using body bias to manage power, performance... Read more »

Latest posts
What’s Behind the Power Savings in sureCore’s FD-SOI SRAM IP? Thumbnail

What’s Behind the Power Savings in sureCore’s FD-SOI SRAM IP?

Posted by on February 12, 2016
In Design & Manufacturing
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By Duncan Bremner, CTO SureCore Limited Editor’s note: sureCore just announced availability of its 28nm FD-SOI memory compiler (press release here), which supports the company’s low-power, Single and Dual Port SRAM IP. Here, the company’s CTO explains why this IP is getting such impressive results. ~ ~ ~ Recently, sureCore announced results from a 28nm FD-SOI test chip that […]

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GlobalFoundries and Synopsys Streamline the Move to 22nm FD-SOI Thumbnail

GlobalFoundries and Synopsys Streamline the Move to 22nm FD-SOI

Posted by and on February 9, 2016
In Design & Manufacturing
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By: Tamer Ragheb, Digital Design Methodology Technical Manager at GlobalFoundries and Josefina Hobbs, Senior Manager of Strategic Alliances, Synopsys It’s clear that getting an optimal balance of power and performance at the right cost is foremost in the minds of designers today. Designers who want either high performance or ultra low-power, or ideally both, have a […]

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Great FD-SOI start for 2016: Samsung, GF, Renesas, NXP/Freescale, ST, Soitec Thumbnail

Great FD-SOI start for 2016: Samsung, GF, Renesas, NXP/Freescale, ST, Soitec

Posted by on February 3, 2016
In Design & Manufacturing, Editor's Blog
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Just a month into 2016 and we already have a raft of FD-SOI news from Samsung, GlobalFoundries, NXP/Freescale, Renesas and more. And of course RF-SOI continues ever stronger. Here’s a quick update of what we’ve been seeing, starting with news from the recent SOI Consortium forum in Tokyo. Many of the presentations are now available on […]

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The Ever-Expanding 28nm FD-SOI Ecosystem (Samsung Interview, Part 3 of 3) Thumbnail

The Ever-Expanding 28nm FD-SOI Ecosystem (Samsung Interview, Part 3 of 3)

Posted by on December 23, 2015
In Design & Manufacturing, News & Viewpoints, SOI In Action
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For this 3-part series, ASN spoke with Kelvin Low, senior director of marketing for Samsung Foundry and Axel Fischer, director of Samsung System LSI business in Europe about the company’s FD-SOI offering. Here in part 3, we’ll talk about the ecosystem. (In part 1 we talked about technology readiness, and in part 2, we talked […]

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When to Choose 28nm FD-SOI and Why (Samsung Interview Part 2 of 3) Thumbnail

When to Choose 28nm FD-SOI and Why (Samsung Interview Part 2 of 3)

Posted by on December 22, 2015
In Design & Manufacturing, News & Viewpoints, SOI In Action
Tagged with , , , , , , , , , , , , , , , ,

For this 3-part series, ASN spoke with Kelvin Low, senior director of marketing for Samsung Foundry and Axel Fischer, director of Samsung System LSI business in Europe about the company’s FD-SOI offering. Here in part 2, we’ll talk about design. (In part 1, we talked about Samsung’s technology readiness. In part 3, we’ll talk about […]

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